Patents Assigned to SiOnyx, LLC
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Patent number: 11728322Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: GrantFiled: February 25, 2022Date of Patent: August 15, 2023Assignee: SIONYX, LLCInventors: Jutao Jiang, Jeffrey McKee, Martin U. Pralle
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Patent number: 11721714Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.Type: GrantFiled: March 26, 2021Date of Patent: August 8, 2023Assignee: SiOnyx, LLCInventors: Martin U. Pralle, Jeffrey McKee, Jason Sickler
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Publication number: 20230051953Abstract: Image intensifier systems incorporating a microchannel plate (MCP) and methods for producing the same are disclosed. In some examples, a device is disclosed that includes a first substrate having a radiation-receiving first surface and an opposed second surface through which electromagnetic radiation is transmitted. A second substrate is coupled to the first substrate to define a vacuum cavity therebetween. An electron-emitting photocathode is disposed within the vacuum cavity for generating electrons from electromagnetic radiation transmitted through the second surface. A microchannel plate is disposed within the vacuum cavity and defines microchannels extending from an input end to an output end. Each of the microchannels is configured to generate electrons in response to an electron generated by the photocathode being received through the input end of the respective microchannel.Type: ApplicationFiled: August 15, 2022Publication date: February 16, 2023Applicant: SiOnyx, LLCInventors: Martin U. PRALLE, Christopher VINEIS
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Patent number: 11264371Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: GrantFiled: July 31, 2020Date of Patent: March 1, 2022Assignee: SiOnyx, LLCInventors: Jutao Jiang, Jeffrey McKee, Martin U. Pralle
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Patent number: 11069737Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.Type: GrantFiled: July 8, 2019Date of Patent: July 20, 2021Assignee: SiOnyx, LLCInventors: Homayoon Haddad, Jutao Jiang
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Patent number: 10985198Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.Type: GrantFiled: March 1, 2019Date of Patent: April 20, 2021Assignee: SiOnyx, LLCInventors: Martin U. Pralle, Jeffrey McKee, Jason Sickler
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Patent number: 10748956Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: GrantFiled: March 1, 2019Date of Patent: August 18, 2020Assignee: SiOnyx, LLCInventors: Jutao Jiang, Jeffrey McKee, Martin U. Pralle
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Patent number: 10505054Abstract: High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.Type: GrantFiled: August 17, 2017Date of Patent: December 10, 2019Assignee: SiOnyx, LLCInventors: James E. Carey, Drake Miller
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Patent number: 10484855Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.Type: GrantFiled: April 23, 2019Date of Patent: November 19, 2019Assignee: SiOnyx, LLCInventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
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Patent number: 10361232Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.Type: GrantFiled: June 5, 2017Date of Patent: July 23, 2019Assignee: SiOnyx, LLCInventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Chintamani Palsule, Leonard Forbes
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Patent number: 10347682Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.Type: GrantFiled: June 5, 2017Date of Patent: July 9, 2019Assignee: Sionyx, LLCInventors: Homayoon Haddad, Jutao Jiang
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Patent number: 10269861Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.Type: GrantFiled: May 30, 2017Date of Patent: April 23, 2019Assignee: SiOnyx, LLCInventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
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Patent number: 10244188Abstract: Systems, devices, and methods for identifying an individual in both cooperative and non-cooperative situations are provided. In one aspect, for example, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelength of from about 700 nm to about 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual. The system can also include an image processing module functionally coupled to the imager device to receive the electronic representation. The image processing module processes the electronic representation into an individual representation having at least one substantially unique identification trait.Type: GrantFiled: September 24, 2015Date of Patent: March 26, 2019Assignee: SiOnyx, LLCInventors: Stephen D. Saylor, Martin U. Pralle
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Patent number: 10229951Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: GrantFiled: August 10, 2017Date of Patent: March 12, 2019Assignee: SiOnyx, LLCInventors: Jutao Jiang, Jeffrey McKee, Martin U. Pralle
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Patent number: 10224359Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.Type: GrantFiled: July 21, 2016Date of Patent: March 5, 2019Assignee: SiOnyx, LLCInventors: Martin U. Pralle, Jeffrey McKee, Jason Sickler
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Patent number: 9939251Abstract: Stacked imager devices that can determine distance and generate three dimensional representations of a subject and associated methods are provided. In one aspect, an imaging system can include a first imager array having a first light incident surface and a second imager array having a second light incident surface. The second imager array can be coupled to the first imager array at a surface that is opposite the first light incident surface, with the second light incident surface being oriented toward the first imager array and at least substantially uniformly spaced. The system can also include a system lens positioned to direct incident light along an optical pathway onto the first light incident surface. The first imager array is operable to detect a first portion of the light passing along the optical pathway and to pass through a second portion of the light, where the second imager array is operable to detect at least a part of the second portion of light.Type: GrantFiled: March 12, 2014Date of Patent: April 10, 2018Assignee: SiOnyx, LLCInventors: Homayoon Haddad, Chen Feng, Leonard Forbes
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Patent number: 9911781Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.Type: GrantFiled: March 24, 2014Date of Patent: March 6, 2018Assignee: SiOnyx, LLCInventors: Homayoon Haddad, Jutao Jiang, Jeffrey McKee, Drake Miller, Leonard Forbes, Chintamani Palsule
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Patent number: 9905599Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.Type: GrantFiled: June 23, 2015Date of Patent: February 27, 2018Assignee: SiOnyx, LLCInventors: Martin U. Pralle, Jeffrey McKee, Jason Sickler
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Patent number: 9761739Abstract: High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.Type: GrantFiled: December 22, 2014Date of Patent: September 12, 2017Assignee: SiOnyx, LLCInventors: James E. Carey, Drake Miller
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Patent number: 9762830Abstract: A method of providing blooming protection to a CMOS imager having a pixel array of a plurality of pixels arranged in rows and columns, where the CMOS imager is operable to capture high dynamic range images using a rolling shutter, is provided. Such a method can include reading out charge accumulated by the pixels in a readout row of a first integration time, applying a reset to the readout row for a reset time sufficient to allow readout and reset to occur in at least one subsequent row, and starting a second integration time of the pixels in the readout row, wherein the second integration time is shorter than the first integration time, and wherein the at least one subsequent row is a sufficient number of rows to have a combined reset to preclude blooming effects from the pixel array during the second integration time.Type: GrantFiled: February 18, 2014Date of Patent: September 12, 2017Assignee: SiOnyx, LLCInventors: Jutao Jiang, Matt Borg