Patents Assigned to SiPhoton, Inc.
-
Patent number: 8722441Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The method also includes forming alight emission layer over the first trench surface, but not over the remainder of the first substrate surface, and removing at least a portion of the substrate from the second side of the substrate to expose the light emission layer and allow it to emit light out of the protrusion or protrusions on the second side of the substrate. These protrusions may be elongated pyramids.Type: GrantFiled: June 6, 2012Date of Patent: May 13, 2014Assignee: SiPhoton Inc.Inventors: Shaoher X. Pan, Jay Chen
-
Patent number: 8674383Abstract: A light emitting device includes a conductive substrate having a first substrate surface and comprising a conductive material, a protrusion formed on the conductive substrate, wherein the protrusion is defined in part by a first protrusion surface that is not parallel to the first substrate surface, and light emission layers disposed over the first protrusion surface. The light emission layers can emit light when an electric field is applied across the light emission layers.Type: GrantFiled: January 21, 2010Date of Patent: March 18, 2014Assignee: SiPhoton Inc.Inventor: Shaoher X. Pan
-
Patent number: 8624292Abstract: A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.Type: GrantFiled: June 8, 2011Date of Patent: January 7, 2014Assignee: SiPhoton Inc.Inventors: Shaoher X. Pan, Jay Chen, Justin A. Payne, Michael Heuken
-
Patent number: 8313963Abstract: A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.Type: GrantFiled: April 26, 2010Date of Patent: November 20, 2012Assignee: SiPhoton Inc.Inventor: Shaoher X. Pan
-
Patent number: 8304794Abstract: A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.Type: GrantFiled: October 31, 2011Date of Patent: November 6, 2012Assignee: SiPhoton Inc.Inventor: Shaoher X. Pan
-
Patent number: 8283676Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on a first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second side opposite to the first side of the substrate. The method also includes forming light emission layers over the first trench surface and the first surface, wherein the light emission layer is configured to emit light and removing at least a portion of the substrate from the second side of the substrate to form a protrusion on the second side of the substrate to allow the light emission layer to emit light out of the protrusion on the second side of the substrate.Type: GrantFiled: May 18, 2010Date of Patent: October 9, 2012Assignee: SiPhoton Inc.Inventors: Shaoher X. Pan, Jay Chen
-
Publication number: 20120241809Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The method also includes forming alight emission layer over the first trench surface, but not over the remainder of the first substrate surface, and removing at least a portion of the substrate from the second side of the substrate to expose the light emission layer and allow it to emit light out of the protrusion or protrusions on the second side of the substrate. These protrusions may be elongated pyramids.Type: ApplicationFiled: June 6, 2012Publication date: September 27, 2012Applicant: SIPHOTON INC.Inventors: Shaoher X. Pan, Jay Chen
-
Patent number: 8268648Abstract: A semiconductor device includes a substrate comprising a first surface having a [111] orientation and a second surface having a second orientation and a plurality of III-V compound layers on the substrate, wherein the plurality of III-V compound layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V compound layers.Type: GrantFiled: August 6, 2009Date of Patent: September 18, 2012Assignee: SiPhoton Inc.Inventor: Shaoher X. Pan
-
Publication number: 20120205617Abstract: A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.Type: ApplicationFiled: June 8, 2011Publication date: August 16, 2012Applicant: SiPhoton Inc.Inventors: Shaoher X. Pan, Jay Chen, Justin Payne, Michael Heuken
-
Patent number: 8217418Abstract: A light emitting device includes a silicon substrate comprising a (111) surface and a GaN crystal structure over the (111) surface of the silicon substrate. The GaN crystal structure includes a first surface along a semi-polar plane of the GaN crystal structure and a second surface along a polar plane of the GaN crystal structure. The light emitting device also includes light emission layers over the first surface of the GaN crystal structure. The light emission layers include at least one quantum well comprising GaN.Type: GrantFiled: February 14, 2011Date of Patent: July 10, 2012Assignee: SiPhoton Inc.Inventors: Shaoher X. Pan, Jay Chen, Justin Payne, Michael Heuken
-
Publication number: 20120043525Abstract: A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.Type: ApplicationFiled: October 31, 2011Publication date: February 23, 2012Applicant: SIPHOTON INC.Inventor: Shaoher X. Pan
-
Patent number: 7956370Abstract: A semiconductor device includes a substrate comprising a first surface having a [111] orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers.Type: GrantFiled: June 12, 2007Date of Patent: June 7, 2011Assignee: SiPhoton, Inc.Inventor: Shaoher X. Pan