Patents Assigned to SiPhoton, Inc.
  • Patent number: 7956370
    Abstract: A semiconductor device includes a substrate comprising a first surface having a [111] orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: June 7, 2011
    Assignee: SiPhoton, Inc.
    Inventor: Shaoher X. Pan