Abstract: This disclosure relates to a semiconductor structure (100), comprising a crystalline silicon substrate (110), having a surface (111), and a crystalline silicon oxide superstructure (120) on the surface (111) of the silicon substrate (110), the silicon oxide superstructure (120) having a thickness of at least two molecular layers and a (1×1) plane structure using Wood's notation.
Type:
Grant
Filed:
April 23, 2020
Date of Patent:
May 5, 2026
Assignee:
SISUSEMI OY
Inventors:
Pekka Laukkanen, Juha-Pekka Lehtiö, Zahra Jahanshah Rad, Mikhail Kuzmin, Marko Punkkinen, Antti Lahti, Kalevi Kokko