Abstract: The addition of a heat slug to a lead frame establishes a heat conduction path from a silicon chip on the lead frame to the heat slug. Hence, when a semiconductor package that encloses the lead frame and the silicon chip is formed, heat produced by the silicon chip can still be channeled away through the radiating surface of the heat slug. Furthermore, the heat slug can be bent over to cover burrs outside the package.

Abstract: A dual leadframe package. A chip including a first surface and a second surface is provided. A gate and a first source/drain region are located on the first surface, and a second source/drain region is located on the second surface. A first lead including a first innerlead and a first outerlead and a second lead including a second innerlead and a second outerlead are provided. The first innerlead is coupled to the first source/drain region, and the second innerlead is coupled to the gate. A conductive plate including a top surface and a bottom surface is provided, and the top surface is coupled to the second source/drain region. A packaging material seals the chip, the first innerlead, the outerlead and a portion of the conductive plate. The bottom surface, the first outerlead and the second outerlead are exposed.

Abstract: A leadframe for an IC package and a method of manufacturing the same are provided. The leadframe can be manufactured in such a manner as to provide suitable bondability, molding compound characteristic, and solderability. The leadframe includes a base structure made from a conductive material. A silver plating is formed over the base structure of the leadframe, and a palladium plating is formed over the silver plating. Depending on actual requirements, a copper layer and a nickel plating can be formed between the silver plating and the base structure of the leadframe, and a palladium/nickel plating can be formed between the silver and palladium platings. Further, a gold layer can be formed over the palladium plating. The palladium plating and the palladium/nickel plating can be formed all over the leadframe or selectively formed only in the external-lead area of the leadframe.

Abstract: A leadframe for an IC package and a method of manufacturing the same are provided. The leadframe can be manufactured in such a manner as to provide suitable bondability, molding compound characteristic, and solderability. The leadframe includes a base structure made from a conductive material. A silver plating is formed over the base structure of the leadframe, and a palladium plating is formed over the silver plating. Depending on actual requirements, a copper layer and a nickel plating can be formed between the silver plating and the base structure of the leadframe, and a palladium/nickel plating can be found between the silver and palladium platings. Further, a gold layer can be formed over the palladium plating. The palladium plating and the palladium/nickel plating can be formed all over the leadframe or selectively formed only in the external-lead area of the leadframe.

Abstract: A leadframe for an IC package and a method of manufacturing the same are provided. The leadframe can be manufactured in such a manner as to provide suitable bondability, molding compound characteristic, and solderability. The leadframe includes a base structure made from a conductive material. A silver plating is formed over the base structure of the leadframe, and a palladium plating is formed over the silver plating. Depending on actual requirements, a copper layer and a nickel plating can be formed between the silver plating and the base structure of the leadframe, and a palladium/nickel plating can be formed between the silver and palladium platings. Further, a gold layer can be formed over the palladium plating. The palladium plating and the palladium/nickel plating can be formed all over the leadframe or selectively formed only in the external-lead area of the leadframe.