Abstract: In various embodiments, evaporation sources for deposition processes have disposed therearound an insulation material configurable to fit snugly around the source body of the evaporation source and to be at least partially distanced away from the source body to expedite heat transfer therefrom.
Type:
Grant
Filed:
March 23, 2016
Date of Patent:
October 29, 2019
Assignee:
SIVA POWER, INC.
Inventors:
Markus Eberhard Beck, Ulrich Alexander Bonne
Abstract: In various embodiments, photovoltaic modules are hermetically sealed by providing a first glass sheet, a photovoltaic device disposed on the first glass sheet, and a second glass sheet, a gap being defined between the first and second glass sheets, disposing a glass powder within the gap, and heating the powder to seal the glass sheets.
Abstract: In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.
Type:
Grant
Filed:
October 10, 2017
Date of Patent:
January 8, 2019
Assignee:
SIVA POWER, INC.
Inventors:
Markus Eberhard Beck, Ulrich Alexander Bonne, Robert G. Wendt
Abstract: In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.
Type:
Grant
Filed:
July 21, 2017
Date of Patent:
May 15, 2018
Assignee:
SIVA POWER, INC.
Inventors:
Markus Eberhard Beck, Timothy J. Nagle, Sourav Roger Basu
Abstract: In various embodiments, photovoltaic modules are hermetically sealed by providing a first glass sheet, a photovoltaic device disposed on the first glass sheet, and a second glass sheet, a gap being defined between the first and second glass sheets, disposing a glass powder within the gap, and heating the powder to seal the glass sheets.
Abstract: In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.
Type:
Grant
Filed:
March 28, 2016
Date of Patent:
November 14, 2017
Assignee:
SIVA POWER, INC.
Inventors:
Markus Eberhard Beck, Ulrich Alexander Bonne, Robert G. Wendt
Abstract: In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.
Type:
Grant
Filed:
May 11, 2016
Date of Patent:
August 29, 2017
Assignee:
SIVA POWER, INC.
Inventors:
Markus Eberhard Beck, Timothy J. Nagle, Sourav Roger Basu
Abstract: In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.
Type:
Grant
Filed:
September 29, 2015
Date of Patent:
June 7, 2016
Assignee:
Siva Power, Inc.
Inventors:
Markus Eberhard Beck, Timothy J. Nagle, Sourav Roger Basu
Abstract: In various embodiments, photovoltaic modules are hermetically sealed by providing a first glass sheet, a photovoltaic device disposed on the first glass sheet, and a second glass sheet, a gap being defined between the first and second glass sheets, disposing a glass powder within the gap, and heating the powder to seal the glass sheets.
Abstract: In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.
Type:
Grant
Filed:
September 22, 2014
Date of Patent:
November 3, 2015
Assignee:
Siva Power, Inc.
Inventors:
Markus Eberhard Beck, Timothy J. Nagle, Sourav Roger Basu
Abstract: Methods for forming semiconductor devices include providing a textured template, forming a buffer layer over the textured template, forming a substrate layer over the buffer layer, removing the textured template, thereby exposing a surface of the buffer layer, and forming a semiconductor layer over the exposed surface of the buffer layer.