Abstract: An imaging system includes a focal plane array, readout electronics, and a computing system in which the number of active pixels is either set at a low-fraction of the total pixels thereby reducing the effect of radiation damage, or radiation damage over time is detected and automatically compensated. Machine learning is used to identify radiation damaged pixels and damaged regions which are subsequently eliminated and replaced by the computational system. The machine learning is used to identify changes in the fixed pattern signal/noise and/or noise of the system, and is then computationally corrected.

Abstract: A photodetector device is provided that includes a ROIC having a top surface with a plurality of electrically conductive first electrodes within a pattern of surface areas on the top surface each surface area having a border, and an electrically conductive electrode grid having a portion on the border of each of the surface areas; and a photodetector film overlying the surface area. The electrode grid can be configured to surround each surface area to define the borders of the surface areas as pixels. The photodetector film can be a colloidal quantum dot film. The ROIC has circuit elements signal-connected to the plurality of first electrodes. Methods for forming the photodetector device include photolithography and deposition methods.

Abstract: A process for the post-deposition treatment of colloidal quantum dot films to improve photodetector performance. A colloidal quantum dot film is first deposited on a suitable substrate or device structure, given a ligand exchange, and then allowed to dry into a completed film. Next, a solution is prepared consisting of dilute H2O2 mixed with a polar solvent such as isopropyl alcohol solution. The prepared film and substrate are then immersed into the prepared solution over a set interval of time. After which, the film is removed and rinsed with solvent, then dried with clean N2 gas. After this treatment, the colloidal quantum dot film is ready for use as a photodetector.

Abstract: An infrared up-conversion device for converting LWIR radiation to NIR radiation includes a distribution of core-shell nano-sized particles within a transparent binder material. The core-shell particles can be composed of a HgTe core and a CdTe shell. The up-conversion device can be used with a NIR imager to function as an LWIR imager without the need for cryogenic cooling.

Abstract: A 3D nanoprinter electron beam lithography module for a lithography system, such as a scanning electron microscope (SEM) or an environmental SEM (ESEM) with a beam blanker and electron beam lithography attachment, but generally applicable to any electron beam lithography capable system. The module is comprised of an in-situ spin-coating stage that is compatible with a cooling-SEM stage, with a spin-coating motor, a spin-coating sample stub, a liquid waste collector cup, a liquid dispensing arm holding a tube bundle that is connected via tubing to micro-syringe pumps or a pressure driven flow controller or pumps connected to fluid reservoirs, an electron beam scan generator control box, electrical feedthroughs, control electronics, and a computing system responsible for controlling the entire module. The dispensing arm can be controlled by a servo motor.

Abstract: A photodetector device is provided that includes a ROIC having a top surface with a plurality of electrically conductive first electrodes within a pattern of surface areas on the top surface each surface area having a border, and an electrically conductive electrode grid having a portion on the border of each of the surface areas; and a photodetector film overlying the surface area. The electrode grid can be configured to surround each surface area to define the borders of the surface areas as pixels. The photodetector film can be a colloidal quantum dot film. The ROIC has circuit elements signal-connected to the plurality of first electrodes. Methods for forming the photodetector device include photolithography and deposition methods.

Abstract: A photodetector device is provided that includes a ROIC having a top surface with a plurality of electrically conductive first electrodes within a pattern of surface areas on the top surface each surface area having a border, and an electrically conductive electrode grid having a portion on the border of each of the surface areas; and a photodetector film overlying the surface area. The electrode grid can be configured to surround each surface area to define the borders of the surface areas as pixels. The photodetector film can be a colloidal quantum dot film. The ROIC has circuit elements signal-connected to the plurality of first electrodes. Methods for forming the photodetector device include photolithography and deposition methods.

Abstract: A process and apparatus is provided to generate and introduce hydrogen from an inductively coupled plasma system into a type II superlattice wafer. The type II superlattice wafer can contain a number of detectors formed on one of its faces. The process can use hydrogen plasma with a total chamber pressure of 20-300 mTorr, a hydrogen gas flow of 50-100 sccm, an ICP power of 100-900 W, a secondary RF power of 15-90 W, and a process duration adjusted to maximize the benefit of hydrogenation (typically between several tens and several hundreds of seconds). The process can introduce a secondary gas to facilitate the plasma ignition, hydrogen ionization and recombination processes or hydrogen diffusion and impingement onto the type II superlattice wafer.