Patents Assigned to Sixon, Inc.
  • Sic single crystal and method for growing the same
    Patent number: 6660084
    Abstract: A method of growing a 4H-poly type SiC single crystal 40, characterized in that the 4H-poly type SiC single crystal 40 is grown on a seed crystal 30 comprised of an SiC single crystal where a {03-38} plane 30u or a plane which is inclined at off angle &agr;, within about 10°, with respect to the {03-38} plane, is exposed.
    Type: Grant
    Filed: February 27, 2002
    Date of Patent: December 9, 2003
    Assignees: Sixon, Inc., Kansai Electric Power C.C., Inc., Mitsubishi Corporation
    Inventors: Hiromu Shiomi, Tsunenobu Kimoto, Hiroyuki Matsunami