Abstract: An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an organic phosphate represented by Formula 1 below: wherein R1 to R3 are independently hydrogen, or a substituted or unsubstituted hydrocarbyl group, and at least one of R1 to R3 is a substituted or unsubstituted hydrocarbyl group.

Abstract: An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1: wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.

Abstract: There provided a substrate processing composition which is a composition for processing a substrate coated with a metal-containing resist composition. The substrate processing composition includes an organic solvent, and additives, and the additives include an organic fluoro acid and an organic sulfonic acid. There is provided a substrate processing method which includes applying a metal-containing resist composition on a substrate; processing the substrate using the substrate processing composition; and forming a pattern of a metal-containing resist film on the substrate.

Abstract: There is provided a substrate processing composition for processing a substrate coated with a metal-containing resist composition. The substrate processing composition includes an organic solvent, an organic acid, and an additive. The additive includes a chelating agent made of quercetin and a derivative thereof and the content of the additive ranges 0.1 to 10% by mass relative to the total mass of the substrate processing composition.

Abstract: An etchant composition includes a silane compound represented by the following Chemical Formula 1: wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a phenyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri (C1-C20) alkylsilyl group, a phosphoryl group, or a cyano group, L is a direct bond or C1-C3 hydrocarbylene, A is an n-valent radical, and n is an integer of 1 to 4.