Abstract: Disclosed is a SiC crystal growth apparatus including a reaction cell provided in a vacuum furnace such that SiC crystals are grown in the reaction cell, the reaction cell is configured such that a source is disposed in a lower region of an area defined by a crucible and a cover and a seed is provided below the cover, and a filter configured to filter out particles from gas supplied from the source is provided between the seed and the source, the filter includes a first layer, a second layer, and a third layer disposed in a direction from the source to the seed and spaced apart from each other, first through holes, second through holes, and third through holes are formed through the first layer, the second layer, and the third layer, respectively, and centers of the first to third holes form a face-centered cubic structure.

Abstract: An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0.