Abstract: There is provided a method for etching a silicon-containing film. The method includes: introducing a substrate having a first silicon-containing film and a second silicon-containing film into a process chamber of an etching apparatus; supplying at least one etching gas including F3NO into the process chamber; applying a predetermined power to the process chamber maintained at a predetermined pressure to generate direct plasma in the process chamber; and etching the first silicon-containing film on the substrate by reactive species (radicals) of the etching gas activated by the direct plasma. The predetermined pressure is set within a predetermined range in which the slope of the etch rate of the first silicon-containing film with respect to the pressure differs from the slope of the etch rate of the second silicon-containing film with respect to the pressure in terms of sign.

Abstract: There is provided a method for producing trifluoroamine oxide. The method includes a step of preparing an intermediate product by simultaneously providing and reacting nitrogen trifluoride and nitrous oxide under the presence of a SbF5 reaction catalyst; and a step of producing trifluoroamine oxide by reacting the intermediate product with potassium fluoride. The step of reacting the intermediate product with potassium fluoride is performed under atmospheric pressure and room temperature.

Abstract: There is provided a substrate processing method. The method includes providing a substrate having a first surface area and a second surface area having a different surface state than that of the first surface area, exposing the substrate to a substrate surface treatment composition containing a deposition inhibitor, and exposing the substrate to a post-treatment composition containing HF.

Abstract: A trisilylamine preparation apparatus includes: a reactor in which a trisilylamine synthesis reaction occurs; a reactant supply pipe for supplying reactants to the reactor; a trisilylamine discharge pipe for discharging trisilylamine from the reactor; a reactor heating means for heating the reaction space of the reactor; and a gaseous by-product discharge pipe for discharging a gaseous by-product from the reactor. The reaction space of the reactor is maintained at a temperature that is lower than the decomposition temperature of a reaction by-product generated during the synthesis reaction, the reactor heating means heats the reaction space of the reactor to a temperature that is higher than or equal to the decomposition temperature after trisilylamine is discharged through the trisilylamine discharge pipe, and the gaseous by-product discharge pipe discharges a gaseous by-product comprising a pyrolysate of the reaction by-product, generated through pyrolysis by means of the reactor heating means.