Abstract: A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. At least one extraction region is disposed on a first side of the active region and has a majority carrier of the second conductivity type. Carriers of the second conductivity type are extracted from the active region and into the extraction region under a condition of reverse bias. At least one exclusion region is disposed on a second side of the active region and has a majority carrier of the first conductivity type. The exclusion region prevents entry of its minority carriers, which are of the second conductivity type, into the active region while in a condition of reverse bias. The exclusion region includes a superlattice with a plurality of layers.
Type:
Application
Filed:
January 30, 2003
Publication date:
August 5, 2004
Applicant:
SMART PIXEL, INC.
Inventors:
Christoph H. Grein, Silviu Velicu, Sivalingam Sivananthan