Abstract: Disclosed herein is a field enhanced inductively coupled plasma processing apparatus including a process chamber having a dielectric lid, and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes at least one horizontal inductive coil configured to inductively couple RF energy into the process chamber to form and maintain plasma in the process chamber, at least one power applying electrode electrically connected to the horizontal inductive coil to capacitively couple the RF energy into the process chamber, a first positioning mechanism coupled to the power applying electrode to change a horizontal position of the power applying electrode, and an RF generator coupled to the at least one power applying electrode. The apparatus further includes a vertical inductive coil connected to the horizontal inductive coil, and a second positioning mechanism shifting an entire vertical position of the vertical inductive coil or changing the pitch thereof.