Patents Assigned to SMC Microsystems Corporation
  • MOS field-effect transistor structure with mesa-like contact and gate areas and selectively deeper junctions
    Patent number: 4023195
    Abstract: An MOS field effect transistor includes a substrate in which source and drain regions are formed. A thick silicon dioxide layer is selectively formed on the upper surface of the substrate, so that in the resulting structure, the junction depth associated with the source and drain regions is selectively greater at contact locations and at the portions of the source and drain regions that are in contact with the active channel.
    Type: Grant
    Filed: January 30, 1976
    Date of Patent: May 10, 1977
    Assignee: SMC Microsystems Corporation
    Inventor: Paul Richman