Patents Assigned to SMIC ADVANCED TECHNOLOGY RESEARCH & DEVELOPMENT (SHANGHAI) Corp.
  • Patent number: 10236216
    Abstract: The present disclosure relates to the technical field of semiconductor processes, and discloses a semiconductor device and a manufacturing method therefor. The semiconductor device includes a substrate; two fins located on the substrate and extending along a first direction; an isolation material layer surrounding the fins, comprising a first isolation regions located at an end region between the two fins along the first direction, and a second isolation region located at sides of the fins along a second direction that is different from the first direction, wherein an upper surface of the first isolation region substantially align with an upper surfaces of the fins, and an upper surface of the second isolation region is lower than the upper surface of the fins; and a first insulating layer on the first isolation region.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: March 19, 2019
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORP., SMIC ADVANCED TECHNOLOGY RESEARCH & DEVELOPMENT (SHANGHAI) Corp., IMEC INTERNATIONAL
    Inventors: Hai Zhao, Yang Liu, Gang Mao, Cheng-Jui Yang, Yongmeng Lee, Shaofeng Yu