Abstract: Provided is a chemical mechanical polishing apparatus including a head part configured to support a wafer, a buffer part on the head part and configured to support a center of the wafer, and a first polishing part that is spaced apart from the buffer part and configured to be on an edge of the wafer.
Abstract: Provided is a semiconductor architecture including a carrier substrate, alignment marks provided in the carrier substrate, the alignment marks being provided from a first surface of the carrier substrate to a second surface of the carrier substrate, a first semiconductor device provided on the first surface of the carrier substrate based on the alignment marks, a second semiconductor device provided on the second surface of the carrier substrate based on the alignment marks and aligned with the first semiconductor device.
Abstract: An apparatus and method for setting a transmission power of a femtocell are provided. A range of a transmission power may be computed, and a minimum amount of power to be used by at least one communication terminal located within a cell coverage may be computed. Additionally, a suitable transmission power for communication may be determined using the computed range of the transmission power and the computed minimum amount of power.
Abstract: Provided are a method and apparatus for compensating for a frequency offset in an interleaved frequency division multiple access. The method compensates for a frequency offset between a transmission signal and a reception signal for a uth user (1≦u≦U, where U denotes the number of users) in an interleaved frequency division multiple access.