Abstract: A multiplexer with excellent electrical properties and a low number of electrical components is provided that may be used in a communication device with two TX paths and two RX paths. The multiplexer comprises three hybrids and two duplexers. Further, a mobile communication device comprising such a multiplexer is provided.

Abstract: The present invention relates to a filter chip (1), comprising an interconnection of at least one first and one second resonator (2, 3) operating with bulk acoustic waves, wherein the first resonator (2) operating with bulk acoustic waves comprises a first piezoelectric layer (4) that is structured in such a way that the first resonator (2) has a lower resonant frequency than the second resonator (3).

Abstract: The present invention relates to a filter circuit (100) comprising a first and a second bulk acoustic wave resonator (2, 3), the first resonator (2) having a first piezoelectric layer (4) structured such that the first resonator (2) has a lower resonant frequency than the second resonator (3), wherein the first piezoelectric layer (4) is structured by recesses (14) passing through the first piezoelectric layer (4), the first resonator (2) and the second resonator (3) as series resonators (102, 105) connected in series with a signal path of the filter circuit (100) or wherein the first resonator (2) and the second resonator (3) as parallel resonators (103, 106) are connected to the signal path of the filter circuit (100) in such a way that in each case one electrode of the resonators is connected to the signal path.

Abstract: An improved electroacoustic transducer with an improved mode profile is provided. The transducer comprises a velocity profile with a periodic structure and an edge structure flanking the periodic structure. The velocity profile also allows to suppress the SH wave mode.

Abstract: A power amplifier circuit comprising a transistor for receiving a signal to be amplified at an input and for outputting an amplified signal at an output; a modulated power supply connected to the transistor output; and a resistive element connected at the transistor output such that a low impedance is maintained at the transistor output across a range of operational frequencies.

Abstract: A temperature-compensated BAW resonator is disclosed. In an embodiment, the BAW includes a substrate and a layer stack disposed thereon, the layer stack including a bottom electrode layer, a top electrode layer, a piezoelectric layer arranged between the bottom and top electrode layers and an acoustic mirror arranged between the bottom electrode layer and the substrate, wherein the acoustic mirror comprises at least two mirror layers, wherein the acoustic mirror comprises high impedance and low impedance layers arranged in an alternating sequence. The layer stack further includes a compensation layer including a material having a positive temperature coefficient of viscoelastic properties, wherein the compensation layer is arranged between the acoustic mirror and the bottom electrode layer, wherein the mirror layers together form a Bragg mirror.

Abstract: There is disclosed a voltage regulator, including a switching stage, for generating an output voltage, the voltage regulator comprising a feedback path for controlling the switching stage, in which a feedback signal in the feedback path is ramp-compensated, the ramp for the ramp compensation being generated from an output of the switching stage.

Abstract: A MEMS component includes, on a substrate, component structures, contact areas connected to the component structures, metallic column structures seated on the contact areas, and metallic frame structures surrounding the component structures. A cured resist layer is seated on frame structure and column structures such that a cavity is enclosed between substrate, frame structure and resist layer. A structured metallization is provided directly on the resist layer or on a carrier layer seated on the resist layer. The structured metallization includes at least external contacts of the component and being electrically conductively connected both to metallic structures and to the contact areas of the component structures.

Abstract: An HF circuit is specified, by means of which carrier aggregation is possible with a simple design. The circuit comprises a duplexer, a further filter, and two phase shifters, and can be used in an HF module of a mobile wireless device.

Abstract: Certain aspects of the present disclosure are generally directed to an integrated circuit device. The integrated circuit device generally includes a capacitive element, a first switch having a first terminal coupled to a first terminal of a capacitive element, and a second switch coupled between the first terminal and a second terminal of the capacitive element in the integrated circuit device.

Abstract: The invention relates to a cased electrical component comprising a carrier substrate (10), a spring device (20), which is arranged on the carrier substrate (10), a chip (30), which on a first side (31) of the chip is coupled to the spring device (20), and a cover element (100), which is arranged on the carrier substrate (10). The cover element (100) is arranged over the chip (20) such that the cover element (100) is in contact with the chip (30) at least on a second side (32) of the chip, which is different from the first side. The component has a low space requirement and is highly sealed with respect to influences from the surroundings.

Abstract: There is disclosed a method of controlling an envelope tracking amplification stage comprising an envelope modulated power supply, the method comprising: determining a shaping function to be applied to an envelope signal for controlling the envelope modulated power supply in dependence on a system linearity objective in a region of operation of the amplifier in which the output power of the amplifier is dependent upon the supply voltage; and determining a pre-distortion function to be applied to an input signal to be amplified in dependence on a further linearity objective of the system, in a region of operation of the amplifier in which the output of the amplifier is dependent upon the input power to the amplifier.

Abstract: This disclosure provides systems, methods and apparatus for a via structure. In one aspect, an apparatus includes a substrate and a first electromechanical systems device on a surface of the substrate. The first electromechanical systems device includes a first metal layer and a second metal layer. A first via structure can be included on the surface of the substrate. The first via structure includes the first metal layer, the second metal layer, and a third metal layer. The first metal layer of the first electromechanical systems device may be the same metal layer as the first metal layer of the first via structure.

Abstract: This disclosure provides systems, methods and apparatus for glass via bars that can be used in compact three-dimensional packages, including package-on-packages (PoPs). The glass via bars can provide high density electrical interconnections in the PoPs. In some implementations, the glass via bars can include integrated passive components. Packaging methods employing glass via bars are also provided.

Abstract: A circuit arrangement includes a transceiver unit, a switching device coupled to the transceiver unit with a terminal and a control device coupled to the switching device. The control device is configured to operate in a first and in a second mode of operation. In the first mode of operation, the switching device is configured by the control device such that a first signal is routed from the transceiver unit via the switching device back to the transceiver unit in a feedback loop. In the second mode of operation, the switching device is configured by the control device such that a second signal is routed from the transceiver unit via the switching device to the terminal or the second signal is routed from the terminal via the switching device to the transceiver unit.

Abstract: In order to suppress an interference frequency in a ladder-type filter, an additional resonator (RZ1) that acts as a capacitance is connected in parallel to a series resonator (S1). The antiresonance of the additional resonator creates an additional pole in order for the interference frequency to be attenuated more effectively.

Abstract: A MEMS component includes a lower electrode. The MEMS component also includes an upper electrode. The upper electrode overlies the lower electrode. The MEMS component also includes a first piezoelectric layer between the lower electrode and the upper electrode. The first piezoelectric layer has a first piezoelectric material comprising AlN and Sc.

Abstract: A BAW component is provided. A method for manufacturing a BAW component is also provided. The component includes a bottom electrode, a top electrode and a first piezoelectric material. The first piezoelectric material is between the bottom electrode and the top electrode. The first piezoelectric material has a higher piezoelectric coefficient than AlN.

Abstract: There is disclosed an envelope tracking modulated supply arranged to generate a modulated supply voltage in dependence on a reference signal, comprising a low frequency path for tracking low frequency variations in the reference signal and including a switched mode power supply, a correction path for tracking high frequency variations in the reference signal and including a linear amplifier, a feedback path from the output of the linear amplifier to the input of the linear amplifier, and a combiner for combining the output of the switched mode power supply and the output of the linear amplifier to generate a modulated supply voltage.

Abstract: A package for a tunable filter is disclosed. In an embodiment, the tunable filter includes a substrate having a first interconnection plane and a semiconductor device assembled on the substrate in a first component plane, the semiconductor device electrically connected to the first interconnection plane and containing tunable passive components. The filter further includes a control unit arranged in the first component plane, a dielectric layer arranged above the first component plane, a second component plane arranged on the dielectric layer and discrete passive devices arranged in the second component plane and interconnected with the semiconductor device, wherein the tunable passive components are tunable by the control unit.