Abstract: Provided herein is a three-dimensional shape measurement apparatus capable of measuring a shape of a measurement object using an interferometer and color information of the measurement object, the apparatus including a light source for emitting a light; a light divider for reflecting the light emitted from the light source or transmitting a light reflected by the measurement object; a lens unit for focusing the light reflected by the light divider onto the measurement object; a light detector for detecting the light reflected from the measurement object; and a light adjuster arranged on a light path between the light source and the light divider, and configured to interrupt the light being emitted from a central area of the light source to reduce interference of light occurring in the lens unit.

Abstract: An image processing apparatus and image processing method according to the present disclosure are characterized to obtain N number of image data regarding a same object, each N number of image data consisting of a plurality of pixels; remove noise data of among N number of pixel data regarding pixels in a same location, from the N number of image data; and generate an image of the object using data excluding the noise data.

Abstract: Disclosed are a substrate support apparatus and an apparatus for examining the seal pattern of an LCD cell. The substrate support apparatus includes a movable stage provided with drawing nozzles for attaching a substrate to an upper surface and adapted to rotate by a predetermined angle; a fixed stage spaced from the movable stage and provided with floating nozzles for ejecting air upward and drawing nozzles for drawing air downward; and a driving device coupled to the movable stage to rotate the movable stage. The apparatus for examining the seal pattern of an LCD cell includes the substrate support apparatus; and a gantry unit including support platforms positioned on both sides of the substrate support apparatus, a bridge positioned above the substrate support apparatus to connect the support platforms, and a correction device coupled to the bridge to examine and repair a seal pattern of a substrate.

Abstract: Disclosed is a substrate processing system with a damage preventing function, comprising: a fluid tank which stores fluid; a chamber which receives the fluid from the fluid tank and provides a space where a substrate is processed; a pipe which connects the fluid tank and the chamber and through which the fluid flows; and a damage preventing unit which allows the fluid tank to be changed in position corresponding to thermal expansion caused in the pipe by receiving heat as the fluid flows in the pipe. With this, the substrate processing system with the damage preventing function for allowing the fluid tank to correspond to change in volume due to the thermal expansion of the pipe and preventing the fluid tank from damage is provided.

Abstract: Disclosed is a method of measuring thickness or a surface profile of a thin film layer formed on a base layer through a white light scanning interferometry, the method including: preparing simulation interference signals corresponding to thicknesses by assuming a plurality of sample thin film layers different in thickness from one another and simulating interference signals with respect to the respective sample thin film layers; acquiring a real interference signal with respect to an optical-axis direction of entering the thin film layer by illuminating the thin film layer with white light; preparing a plurality of estimated thicknesses that the thin film layer may have on the basis of the real interference signal; comparing whether the simulation interference signal having thickness corresponding to the estimated thickness is substantially matched with the real interference signal; and determining the thickness of the simulation interference signal substantially matched with the real interference signal as t

Abstract: Provided herein is a TSV measuring interferometer that uses a variable field stop that adjusts such that a light is focused at an inlet and at a bottom surface of a TSV when measuring a diameter and depth of the TSV, thereby reducing a measurement time and result data, the interferometer also using a telecentric lens that adjusts the light injected into the TSV to be a straight line, so as to obtain a sufficient amount of light reaching the bottom surface to improve the accuracy of measurement even in a TSV having a large aspect ratio.

Abstract: Disclosed is a vacuum deposition apparatus for depositing a source on a substrate arranged in a vacuum chamber, the vacuum deposition apparatus including: a substrate carrier which carries the substrate; a nozzle which is arranged to be opposite to the substrate carrier and jets a source to the substrate arranged on the substrate carrier; and a temperature controller which controls a surface temperature of the substrate carrier such that the source is prevented from being deposited on the substrate carrier. Thus, a vacuum deposition apparatus can minimize deterioration in productivity caused when sources are deposited as particles on the substrate carrier for carrying a substrate.

Abstract: An image processing apparatus and image processing method according to the present disclosure are characterized to obtain N number of image data regarding a same object, each N number of image data consisting of a plurality of pixels; remove noise data of among N number of pixel data regarding pixels in a same location, from the N number of image data; and generate an image of the object using data excluding the noise data.

Abstract: Provided herein is a TSV measuring interferometer that uses a variable field stop that adjusts such that a light is focused at an inlet and at a bottom surface of a TSV when measuring a diameter and depth of the TSV, thereby reducing a measurement time and result data, the interferometer also using a telecentric lens that adjusts the light injected into the TSV to be a straight line, so as to obtain a sufficient amount of light reaching the bottom surface to improve the accuracy of measurement even in a TSV having a large aspect ratio.

Abstract: Disclosed is a source material supplying unit for a thin film depositing apparatus, arranged in a chamber for the thin film deposition apparatus and supplying an evaporation material to an injector for injecting the evaporation material, the source material supplying unit including: a container body which is internally formed with a storage space where the evaporation material is stored, and includes a discharging hole formed at one side thereof connected to the injector via a connection line; a transfer member which includes a piston body inserted in the storage space of the container body movably along a straight line, two or more seating members formed with a seating portion on an outer circumferential surface and arranged on an outside surface of the piston body, and at least two contact rings assembled to the seating portion of the seating member and closely contacting the inner circumferential surface of the storage space of the container body; and a pressing member which applies pressure to the transfe

Abstract: A plasma monitoring device includes a plasma supplier including a power supply, a reaction gas supply line, and an emission nozzle for emitting plasma, which is generated therein, toward an object; a camera unit for obtaining an image of the plasma emission state; and a controller for obtaining a measurement value by converting pixel information of the image into a numerical value and comparing it with a reference value, which is a measurement value in a normal emission state, to check the plasma emission state. The camera unit obtains an image of the plasma emission state, and the controller analyzes the image to obtain a measurement value, which is used to monitor the state of plasma in real time and control the amount of reaction gas supplied to the plasma supplier and the plasma discharge condition, so that plasma is evenly emitted from the plasma supplier.

Abstract: Disclosed are a vaporization apparatus and a control method for the same. The vaporization apparatus includes a vaporization crucible adapted to receive a raw material; a vaporization heating unit adapted to vaporize the raw material by heating the vaporization crucible; a temperature measuring unit adapted to measure temperature of the vaporization crucible; a power measuring unit adapted to measure an applied power of the vaporization heating unit; and a control unit adapted to control a vaporization quantity of the raw material based on any one of a temperature variation value of the temperature measuring unit and a power variation value of the power measuring unit. The vaporization apparatus uses a non-contact/electronic method which measures a vaporization quantity through a temperature variation value and a power variation value during vaporization of a raw material.

Abstract: Disclosed is a method for measuring a thickness of a subjecting layer attached on a base layer by means of an interferometer, which includes the steps of: obtaining a correlation equation of a phase difference with respect to thicknesses of sample layers, the thicknesses being different from each other, the sample layers being made from a material substantially equal to a material of the subjecting layer; obtaining a first interference signal with respect to an optical axial direction incident to the base layer at a boundary surface between an air layer and the base layer; obtaining a second interference signal with respect to the optical axial direction at a boundary surface between the subjecting layer and the base layer; obtaining a phase difference between a phase of the first interference signal and a phase of the second interference signal at respective heights substantially equal to each other with respect to the optical axial direction; and determining a thickness of the subjecting layer by inserting

Abstract: The present invention relates to a dark-field examination device.

Abstract: A thickness measurement apparatus includes a beam splitter for reflecting or transmitting a ray irradiated from an optical source or a ray reflected by a measurement object; a first lens part which condenses a ray to the measurement object and generates a reference ray; a second lens part for condensing a ray to the object to be measured; an interference light detector for detecting an interference signal generated by the reflected ray and reference ray; a spectroscopic detector corresponding to the second lens part to form a light path different from the path formed by the interference light detector and splits the ray reflected by the measurement object to detect an intensity and wavelength of each split ray; and a light path converter for selectively transmitting a ray to the interference light detector or spectroscopic detector, wherein position exchanging is performed between the first second lens parts.

Abstract: Provided are a source supplying unit and a method for supplying a source. The source supplying unit includes a pot configured to store a source material, an injector communicating with the pot to inject the source material evaporated from the pot, a high frequency coil part surrounding an outside of the pot, and a resistance-type heating part disposed at an outside of the injector. Since a high frequency induction heating method and a resistance-type heating method are combined to evaporate a source material to be supplied, a large amount of source material can be used, and the thickness and quality of a thin film can be easily controlled.

Abstract: A vision inspection system and a workpiece inspection method are used in inspecting a workpiece. The vision inspection system includes a level block having an upper surface whose opposite end regions are defined as a first position and a second position. A first transfer device has a table for supporting the workpiece. The first transfer device is installed on the upper surface of the level block for rectilinearly moving the table between the first position and the second position. A camera is arranged above the level block for taking an image of the workpiece to output image data. A second transfer device is installed on the upper surface of the level block for rectilinearly moving the camera between the first position and the second position. A computer is connected to the first transfer means, the camera and the second transfer means to control them in a specified manner.

Abstract: Provided is an apparatus for measuring a three-dimensional profile using a LCD in which a sine wave pattern is formed on a measurement object, whereby image information of the measurement object is obtained using the sine wave pattern and a camera, and the image information is analyzed to measure a profile of the measurement object, the apparatus including a LCD projector including: a light source irradiating light forward; a LCD panel disposed at a front side of the light source, generating a sine wave pattern having a plurality of phases and a plurality of periods; polarization plates respectively disposed on front and rear sides of the LCD panel; a first focusing lens disposed apart from a front side of the LCD panel, focusing the sine wave pattern generated by the LCD panel on the measurement object; and a housing supporting the light source, the LCD panel, the polarization plates and the first focusing lens.

Abstract: Disclosed is a method of measuring thickness or a surface profile of a thin film layer formed on a base layer through a white light scanning interferometry, the method including: preparing simulation interference signals corresponding to thicknesses by assuming a plurality of sample thin film layers different in thickness from one another and simulating interference signals with respect to the respective sample thin film layers; acquiring a real interference signal with respect to an optical-axis direction of entering the thin film layer by illuminating the thin film layer with white light; preparing a plurality of estimated thicknesses that the thin film layer may have on the basis of the real interference signal; comparing whether the simulation interference signal having thickness corresponding to the estimated thickness is substantially matched with the real interference signal; and determining the thickness of the simulation interference signal substantially matched with the real interference signal as t

Abstract: The present invention relates to a dark-field examination device.