Abstract: The detection device includes first and second photodetectors each sensitive to two different wavelength ranges. The detection device comprises a first filter configured to allow the first wavelength range to pass and to block the second wavelength range. The first filter covers the first photodetector and leaves the second photodetector uncovered. The detection device comprises a second filter located at a distance from the first and second photodetectors and at a distance from the first filter. The second filter is configured to allow the first and the second wavelength ranges to pass. A processing circuit is configured to receive electric signals coming from the first and second photodetectors and to provide data relative to the radiation of the second wavelength range by comparing the first signal with the second signal.

Abstract: The analog-to-digital converter includes a first stage in which a voltage to be converted is applied to the input of a first comparator. The first comparator delivers, on a first digital output, a first digital result representative of the comparison between the voltage to be converted and the comparison voltage. The first digital output is connected to a calculator of a first intermediate voltage. A second comparator compares the first intermediate voltage with the comparison voltage and delivers a second digital result on a second digital output terminal. The second digital output terminal is connected to a second calculator of residual voltage that is a function of the voltage to be converted, of first and second voltages and of the first and second digital results. The first calculator is formed by the second calculator.

Abstract: The photodetector includes a photon absorbing region formed by a first semiconductor material having a first bandgap energy value. It also includes a blocking region formed by at least second and third semiconductor materials configured to prevent the majority charge carriers from passing between the photon absorbing region and a contact region, the second semiconductor material presenting a second bandgap energy value higher than the first bandgap energy value to form a quantum well with the third semiconductor material. The blocking region is doped.

Abstract: The detection circuit comprises a detector connected to an integration node. A bias circuit biases the detector between a first bias state and a second floating state. The potential of the integration node is at a target value when the bias circuit biases the detector to the first state and varies when the detector is in floating state. A measurement circuit without charge losses delivers a value representative of the potential present on the integration node N. A transfer circuit of the electric charges performs transfer of the electric charges from a stray capacitor of the photodiode to an integration capacitor. An output terminal delivers a voltage representative of the potential present on the second terminal of the first capacitor.

Abstract: The detection device comprises a cold finger which performs thermal connection between a detector fitted on a cooling plate and a cooling system. The cold finger comprises at least one side wall at least partially formed by an area made from the hafnium-based amorphous metal alloy. Advantageously, the whole of the cold finger is made from the hafnium-based amorphous metal alloy.

Abstract: The circuit of detection of light radiation includes a photodetector. The photodetector is coupled to three capacitors by way of three switches. The capacitors are parallel mounted to form a capacitive load whose value of electrical capacity changes as a function of the openings/closures of the switches. This configuration allows to stabilise the voltage present on the output terminal in the detection circuit for a wider range of illumination sustained by photodetector.

Abstract: The detection device comprises a photodetector configured to transform an electromagnetic signal into a representative electric signal. The detection device also comprises an amplifier having a first input terminal connected to a first terminal of the photodetector. An integration capacitor is connected to the output terminal of the amplifier and to the first input terminal of the amplifier. A first source of a reference voltage is connected to a second input terminal of the amplifier. A second source of a detector voltage is connected to a second input terminal of the photodetector. The first and second voltage sources are correlated so as to correlate the noise components.

Abstract: The detection circuit comprises a switch connected between a photodiode and an integrator. It further comprises means for alternately switching bias conditions of the photodiode between a reverse bias and another state. The electronic traps in the photodiode are regularly passivated during the other state.