Abstract: The multispectral detection device comprises first and second photodetectors sensitive to two different wavelengths. The two photodetectors are connected to two integration capacitors of two different readout circuits. Two reset circuits are configured so as to initialise the two integration capacitors separately. A first synchronisation circuit is connected to the first readout circuit and to the synchronisation signal and clock signal generators. The first synchronisation circuit is configured in such a way as to define the frame by detection of a leading edge of the synchronisation signal, count the number of occurrences of a trailing edge of the clock signal, initiate or terminate a data acquisition phase when the number of occurrences of trailing edges is equal to a threshold value recorded in a register of the first synchronisation circuit.

Abstract: An array of photodetector is organized along a first organizational axis on a semiconductor substrate of a first conductivity type. Each photodetector is at least partially formed in the substrate which forms a first electrode of the photodetector. A peripheral polarization ring is formed around the array of photodetectors. The polarization ring is connected to a polarization voltage generator and to the substrate. A read circuit is connected to a photodetector via the second terminal of the photodetector. A first switch connects the photodetector to a generator of an additional voltage. A second switch connects the photodetector to the associated read circuit. The first and the second switches are in opposite states.

Abstract: A pixel comprises a photodetector and a control circuit. The pixel is provided with an output terminal designed to connect an analysis circuit. The photodetector is configured to have two different operating modes associated with different biasing conditions. A switch connecting the photodetector to the output terminal of the pixel and a circuit for a connecting/disconnecting the control circuit with the output terminal of the pixel and with the photodetector allow to switch between the two operating modes. A comparator compares the voltage across the capacitive load with respect to a threshold value and outputs first and second signals according to the comparison. The comparator is connected to the circuit for connecting/disconnecting the control circuit and to the switch.

Abstract: The detection circuit with correlated double sampling comprises two transimpedance amplifiers connected by means of a sampling capacitor. A photodiode is connected to the input of the first transimpedance amplifier. The circuit comprises an anti-blooming circuit connected between the input and output of the first transimpedance amplifier. The anti-blooming circuit comprises means for comparing the output voltage of the first transimpedance amplifier with a setpoint voltage defined by means of the output voltage of the second transimpedance amplifier. The means for comparing are connected to means for applying a feedback current to the input of the first transimpedance amplifier when the difference between the output voltage and the setpoint voltage reaches a limit value.

Abstract: The detection circuit comprises a photodiode connected to a readout circuitry. The photodiode and readout circuitry are connected by means of a transistor arranged to operate as a closed switch when the readout circuitry biases the photodiode in a predefined range and to operate as an open switch in the other cases.

Abstract: In an infrared detector provided with a photodiode, when the temperature of the photodiode is lowered to its operating temperature, the photodiode is forward biased. During forward biasing of the photodiode, injection of a majority carrier current takes place through the photodiode. The majority carriers mask a part of the defects of the photodiode. The acquisition phase is then performed by reverse biasing the photodiode.

Abstract: The analog-to-digital converter comprises a first stage in which a voltage to be converted is applied to the input of a first comparator. The first comparator delivers a first digital result representative of the comparison between the voltage to be converted and the reference voltage on a first digital output. The first digital output is connected to means for calculating a first intermediate voltage. A second comparator compares the first intermediate voltage with the reference voltage and delivers a second digital result on a second digital output terminal. The digital output terminal is connected to second means for calculating a residual voltage according to the voltage to be converted, the first and second voltages and the first and second digital results.

Abstract: The detection circuit comprises a photodiode connected to an input of a capacitive transimpedance amplifier. The circuit comprises an anti-blooming circuit connected between the input and an output of the capacitive trans-impedance amplifier. The anti-blooming circuit comprises a field effect transistor connected between the input and output of the capacitive trans-impedance amplifier. The transistor is of pMOS type when the input of the capacitive transimpedance amplifier is connected to a cathode of the photodiode. The transistor is of nMOS type when the input of the capacitive transimpedance amplifier is connected to an anode of the photodiode.

Abstract: Disclosed is a method for producing an array for detecting electromagnetic radiation, the array including a elementary detection modules mounted on an interconnect substrate, the modules comprising at least one circuit for detecting the radiation, connected to a read circuit by hybridization, the read circuits being attached to the interconnect substrate, the method including making, on the rear face of read circuit of each of the elementary modules grooves or slots, and areas without such grooves or slots; mounting, on the front face of the interconnect substrate, and on the front face of the detection circuit, registration features that ensure accurate positioning of each of the elementary modules on the interconnect substrate; pressing each elementary module onto the interconnect substrate after positioning; ensuring migration of the adhesive through grooves or slots; raising the temperature of the chamber used to produce the array to cure of the adhesive.

Abstract: This electrical or electronic component with sealed encapsulation comprises: a support (1) intended to house one or more electrical or electronic components (5) from which electrically conducting tracks (6) radiate towards the periphery of the said support; and a protective and sealing casing (2) attached to the said support and hermetically sealed with respect to the latter by means of a peripheral metal bead (7), the main part of the casing, intended to be placed opposite the said support (1), being provided with hollow conducting elements (3) which pass right through the thickness of the said casing, and from the external upper end of which elements (3) electrically conducting metal tracks (9) radiate towards the periphery of the casing, the internal lower end of which elements (3) being connected to at least one electrical connection track (6) provided on the said support via a metal hybridization ball (8).

Abstract: A low temperature infrared detector for use in a cryostat having a cold finger. A cold plane is mounted upon the cold finger in heat transfer relationship therewith. A read circuit board is mounted upon the cold plane and a detector circuit board is placed over the read circuit and is connected thereto both electrically and thermally. A screen is fitted over the detector circuit board. The screen has a shoulder formed in its bottom wall into which the detection board is press-fitted and a window that frames the detecting circuitry through which the circuitry can be viewed by an IR source. Preferably, the screen is produced using electroforming techniques.