Abstract: The detection device includes first and second photodetectors each sensitive to two different wavelength ranges. The detection device comprises a first filter configured to allow the first wavelength range to pass and to block the second wavelength range. The first filter covers the first photodetector and leaves the second photodetector uncovered. The detection device comprises a second filter located at a distance from the first and second photodetectors and at a distance from the first filter. The second filter is configured to allow the first and the second wavelength ranges to pass. A processing circuit is configured to receive electric signals coming from the first and second photodetectors and to provide data relative to the radiation of the second wavelength range by comparing the first signal with the second signal.

Abstract: The analog-to-digital converter includes a first stage in which a voltage to be converted is applied to the input of a first comparator. The first comparator delivers, on a first digital output, a first digital result representative of the comparison between the voltage to be converted and the comparison voltage. The first digital output is connected to a calculator of a first intermediate voltage. A second comparator compares the first intermediate voltage with the comparison voltage and delivers a second digital result on a second digital output terminal. The second digital output terminal is connected to a second calculator of residual voltage that is a function of the voltage to be converted, of first and second voltages and of the first and second digital results. The first calculator is formed by the second calculator.

Abstract: The photodetector includes a photon absorbing region formed by a first semiconductor material having a first bandgap energy value. It also includes a blocking region formed by at least second and third semiconductor materials configured to prevent the majority charge carriers from passing between the photon absorbing region and a contact region, the second semiconductor material presenting a second bandgap energy value higher than the first bandgap energy value to form a quantum well with the third semiconductor material. The blocking region is doped.

Abstract: The circuit of detection of light radiation includes a photodetector. The photodetector is coupled to three capacitors by means of three switches. The capacitors are parallel mounted to form a capacitive load whose value of electrical capacity changes as a function of the openings/closures of the switches. This configuration allows to stabilize the voltage present on the output terminal in the detection circuit for a wider range of illumination sustained by photodetector.

Abstract: The detection circuit comprises a detector connected to an integration node. A bias circuit biases the detector between a first bias state and a second floating state. The potential of the integration node is at a target value when the bias circuit biases the detector to the first state and varies when the detector is in floating state. A measurement circuit without charge losses delivers a value representative of the potential present on the integration node N. A transfer circuit of the electric charges performs transfer of the electric charges from a stray capacitor of the photodiode to an integration capacitor. An output terminal delivers a voltage representative of the potential present on the second terminal of the first capacitor.

Abstract: The multispectral detection device comprises first and second photodetectors sensitive to two different wavelengths. The two photodetectors are connected to two integration capacitors of two different readout circuits. Two reset circuits are configured so as to initialise the two integration capacitors separately. A first synchronisation circuit is connected to the first readout circuit and to the synchronisation signal and clock signal generators. The first synchronisation circuit is configured in such a way as to define the frame by detection of a leading edge of the synchronisation signal, count the number of occurrences of a trailing edge of the clock signal, initiate or terminate a data acquisition phase when the number of occurrences of trailing edges is equal to a threshold value recorded in a register of the first synchronisation circuit.

Abstract: A method of positioning elements or additional technological levels on the incident surface of an infrared detector of hybridized type, said detector being formed of a detection circuit comprising an array network of photosensitive sites for the wavelength ranges of interest, hybridized on a read circuit, said detection circuit resulting from the epitaxial growth of a detection material on a substrate, comprising forming within the detection circuit indexing patterns by marking of the growth substrate.

Abstract: An electromagnetic radiation detection circuit includes a photodetector transforming the received electromagnetic radiation into an electric current. A readout circuit is coupled to a first terminal of the photodetector and configured to transform a current signal into a voltage signal. A capacitor has a first terminal electrically coupled to the first terminal of the photodetector and a second terminal electrically coupled to the readout circuit. A resistor has a first terminal electrically coupled to the capacitor and to a first terminal of the photodetector. A bias circuit is electrically coupled to a second terminal of the resistor and configured to bias the photodetector during a first time period by means of the resistor.

Abstract: A method for producing the growth of a semiconductor material, in particular of type II-VI, uses a melt of the semiconductor placed in a sealed bulb under vacuum or under controlled atmosphere, the bulb being subjected to a sufficient temperature gradient for first maintaining the melt in the liquid state, then causing its progressive crystallization from the surface towards the bottom. The method further comprises an element capable of floating on the surface of the melt, and equipped with a substantially central bore, intended for receiving a seed crystal for permitting the nucleation leading to the preparation of a seed crystal, and also supporting the seed crystal above the melt while maintaining it in contact with the melt in order to permit the continued crystallization from the seed crystal by lowering the temperature gradient.

Abstract: The detection device comprises a cold finger which performs thermal connection between a detector fitted on a cooling plate and a cooling system. The cold finger comprises at least one side wall at least partially formed by an area made from the hafnium-based amorphous metal alloy. Advantageously, the whole of the cold finger is made from the hafnium-based amorphous metal alloy.

Abstract: The detection device comprises a cold finger which performs the thermal connection between a detector and a cooling system. The cold finger comprises at least one side wall at least partially formed by an area made from the amorphous metal alloy. Advantageously, the whole of the cold finger is made from the amorphous metal alloy.

Abstract: A detection device for infrared radiation has a detection circuit of infrared radiation equipped with at least one photodetector. A readout circuit is electrically connected to the detection circuit, and is configured to process the signal emitted by the detection circuit. A Joule-Thomson cooler cools a cold table thermally and mechanically connected to the detection circuit and the readout circuit. The cold table including an internal cavity supplied with gaseous mixture. A relief port of the gas mixture is arranged at an input in the internal cavity. An output of the compressor feeds the relief port in a gaseous mixture. The input of the compressor receives the relaxed gaseous mixture from an output of the internal cavity.

Abstract: The circuit of detection of light radiation includes a photodetector. The photodetector is coupled to three capacitors by way of three switches. The capacitors are parallel mounted to form a capacitive load whose value of electrical capacity changes as a function of the openings/closures of the switches. This configuration allows to stabilise the voltage present on the output terminal in the detection circuit for a wider range of illumination sustained by photodetector.

Abstract: An electromagnetic radiation detection circuit includes a photodetector transforming the received electromagnetic radiation into an electric current. A bias circuit is connected to the photodetector. An amplifying circuit has an input terminal coupled to the photodetector. An amplifying transistor has a first low-impedance electrode forming the input terminal of the amplifying circuit and a second low-impedance electrode coupled to an output terminal of the detection circuit. The transistor is configured to conduct the current applied on the first electrode. A high-impedance electric load is connected to the second electrode to deliver a voltage representative of the electric current originating from the photodetector.

Abstract: The detection device comprises a photodetector configured to transform an electromagnetic signal into a representative electric signal. The detection device also comprises an amplifier having a first input terminal connected to a first terminal of the photodetector. An integration capacitor is connected to the output terminal of the amplifier and to the first input terminal of the amplifier. A first source of a reference voltage is connected to a second input terminal of the amplifier. A second source of a detector voltage is connected to a second input terminal of the photodetector. The first and second voltage sources are correlated so as to correlate the noise components.

Abstract: A flexible printed circuit of low emissivity including first and second ends and a flexible central portion extending between the first and second ends and including electrically-conductive tracks, coated with a polymer material, to electrically connect the first and second ends. The flexible central portion is at least partly covered with a heat shield formed in a material having an emissivity smaller than those of the polymer material and of the electrically-conductive tracks.

Abstract: A pixel matrix is arranged in line of pixels. Each pixel is either in a first state or in a second state. The matrix mainly contains pixels in the second state. Each line of pixels is tested in order to determine whether it contains or not a pixel in a first state. The result from this test for each line is sent into a receiver. The lines including at least one pixel in the first state are more accurately analyzed in order to determine the position of this or these pixel in the line.

Abstract: The detection circuit comprises a switch connected between a photodiode and an integrator. It further comprises means for alternately switching bias conditions of the photodiode between a reverse bias and another state. The electronic traps in the photodiode are regularly passivated during the other state.

Abstract: A method for removing the growth substrate of a circuit of electromagnetic radiation detection, especially in the infrared or visible range, said detection circuit including a layer of detection of said radiation made of Hg(1-x)CdxTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.

Abstract: An array of photodetector is organized along a first organizational axis on a semiconductor substrate of a first conductivity type. Each photodetector is at least partially formed in the substrate which forms a first electrode of the photodetector. A peripheral polarization ring is formed around the array of photodetectors. The polarization ring is connected to a polarization voltage generator and to the substrate. A read circuit is connected to a photodetector via the second terminal of the photodetector. A first switch connects the photodetector to a generator of an additional voltage. A second switch connects the photodetector to the associated read circuit. The first and the second switches are in opposite states.