Patents Assigned to Societe pour d'Etude et la Fabrication de Circuits Integres Speciaux EFCS
  • Process for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidation
    Patent number: 4593454
    Abstract: The invention concerns an integrated circuit the monocrystalline or polycrystalline silicon zones of which the source, gate and drain are covered with tantalum silicide TaSi.sub.2 while the remainder of the slice is covered with portions of a layer of tantalum oxide Ta.sub.2 O.sub.5, especially on the sides of the grids of polycrystalline silicon and on the thick oxide and an aluminum alloy layer comes into contact with the tantalum silicide to form connections with the portions of tantalum silicide.
    Type: Grant
    Filed: November 20, 1984
    Date of Patent: June 10, 1986
    Assignee: Societe pour d'Etude et la Fabrication de Circuits Integres Speciaux EFCS
    Inventors: Annie Baudrant, Michel Marty