Abstract: A comparator including: first and second input transistors connected to control signals at first and second nodes of the comparator; latch circuitry; at least one controllable offset-correction component having an input terminal and connected to control the signal at one of the first and second nodes based on an offset-correction signal provided at its input terminal; for each controllable offset-correction component, an offset correction circuit configured to provide the offset-correction signal provided at its input terminal; and control circuitry.

Abstract: A power supply conductive trace structure of a semiconductor device includes a first power supply conductive trace in a mesh form provided in a first power supply conductive trace layer, and a second power supply conductive trace provided in a redistribution layer located on or above the first power supply conductive trace to correspond in position to a conductive trace area that is a portion of the first power supply conductive trace and to be connected to the first power supply conductive trace.

Abstract: Disclosed herein is a semiconductor integrated circuit device including a standard cell with a fin extending in a first direction. The fin and a gate line extending in a second direction perpendicular to the first direction and provided on the fin constitute an active transistor. The fin and a dummy gate line provided in parallel with the gate line constitute a dummy transistor. The active transistor shares a node as its source or drain with the dummy transistor.

Abstract: In a power line structure for supplying power to standard cells, buried power lines extending in the X direction are placed at a given spacing in the Y direction. A local power line extending in the Y direction is connected with the buried power lines. Metal power lines extending in the X direction are formed in an upper-layer metal interconnect layer and connected with the local power line. The spacing of placement of the metal power lines in the Y direction is greater than the spacing of placement of the buried power lines.

Abstract: A semiconductor device includes a first semiconductor chip, and a second semiconductor chip, wherein the first semiconductor chip includes a substrate including a first principal surface facing the second semiconductor chip and a second principal surface opposite to the first principal surface, a first power supply line and a second power supply line arranged on the second principal surface of the substrate, a power supply switch circuit arranged electrically between the first power supply line and the second power supply line, a first via arranged in the substrate to extend from the first power supply line to the first principal surface, and a second via arranged in the substrate to extend from the second power supply line to the first principal surface, wherein the second semiconductor chip includes a third power supply line connected to the first via, and a fourth power supply line connected to the second via.

Abstract: Provided is a semiconductor chip including a nanowire field effect transistor (FET) and having a layout configuration effective for making manufacturing the chip easy. A semiconductor chip includes a first block including a standard cell having a nanowire PET and a second block including a nanowire FET. In the first and second blocks, nanowires extending in an X direction have an arrangement pitch in a Y direction of an integer multiple of a pitch P1. Pads have an arrangement pitch in the X direction of an integer multiple of a pitch P2.

Abstract: In a standard cell including nanowire FETs, pads connected to nanowires are arranged at a predetermined pitch in X direction along which the nanowires extend. A cell width of the standard cell is an integral multiplication of the pitch. In a case where the standard cell is arranged to constitute the layout of a semiconductor integrated circuit device, the pads are regularly arranged in the X direction.

Abstract: A phase interpolation circuit includes: a first buffer circuit configured to adjust a rise time or a fall time of a first reference clock signal based on a first control signal to generate a first input clock signal; a second buffer circuit configured to adjust a rise time or a fall time of a second reference clock signal based on a second control signal to generate a second input clock signal; a detection circuit configured to detect a rise time or a fall time of the first input clock signal or the second input clock signal and generate the first control signal and the second control signal according to a detection result thereof; and a mixer circuit configured to generate an output clock signal having a phase between a phase of the first input clock signal and a phase of the second input clock signal.

Abstract: A processing circuit includes: a clock generating circuit configured to generate, based on a reference clock signal and a frequency division ratio, a first clock signal; a frequency dividing and delay circuit configured to generate a second clock signal to have a first phase difference with the reference clock signal by dividing the frequency of the first clock signal and delaying the first clock signal based on a phase shift set signal and the frequency division ratio; an analog-to-digital converter circuit configured to convert an analog signal into a digital signal based on the first clock signal and a conversion trigger signal indicating a sampling period and a conversion period; and a control circuit configured to generate the conversion trigger signal to have the same cycle as the second clock signal based on the frequency division ratio and the first clock signal.

Abstract: An inductor arrangement, comprising: a first pair of driven inductors configured to be driven to generate magnetic fields which are substantially in antiphase, and arranged relative to one another so that their magnetic fields substantially cancel one another at a first null line between those inductors; and a second pair of driven inductors configured to produce magnetic fields which are substantially in antiphase, and arranged relative to one another so that their magnetic fields substantially cancel one another at a second null line between those inductors, wherein the pairs of driven inductors are arranged relative to one another so that the first and second null lines intersect one another, with the first pair of driven inductors located substantially on the second null line and the second pair of inductors located substantially on the first null line.

Abstract: A semiconductor integrated circuit device includes first and second semiconductor chips stacked one on top of the other. First power supply lines in the first semiconductor chip are connected with second power supply lines in the second semiconductor chip through a plurality of first vias. The directions in which the first power supply lines and the second power supply lines extend are orthogonal to each other.

Abstract: An ultrasonic probe includes a wireless transmitter-receiver configured to perform communication through a wireless network having a plurality of channels and obtain identification information of apparatuses connected to the wireless network from the apparatuses; a memory configured to store identification information for identifying other ultrasonic probes from among the apparatuses; and a processor configured to count other ultrasonic probes connected with the wireless network on a per channel basis with respect to the plurality of channels based on the identification information obtained by the wireless transmitter-receiver and the identification information stored in the memory, and determine to connect to a channel at which the number of the other ultrasonic probes counted by the processor is smallest.

Abstract: A layout structure of a capacitive cell using forksheet FETs is provided. In transistors P3 and N3, VDD is supplied to a pair of pads and a gate interconnect, and VSS is supplied to a pair of pads and a gate interconnect. Capacitances are produced between nanosheets and the gate interconnect and between nanosheets and the gate interconnect. The faces of the nanosheets closer to the nanosheets are exposed from the gate interconnect, and the faces of the nanosheets closer to the nanosheets are exposed from the gate interconnect.

Abstract: An image processing apparatus according to one aspect includes a hardware processor connected to a memory. The hardware processor performs a process including: acquiring a plurality of captured images whose capturing areas overlap with one another; determining whether an object is included in an overlap portion of adjacent ones of the plurality of captured images in a projected image, the projected image being obtained by projecting the plurality of captured images onto a reference projection plane, the reference projection plane being an image projection plane virtually disposed in a virtual space corresponding to a real space; and performing an adjustment process on an overlap area of the reference projection plane, the overlap area including the object on the reference projection plane and corresponding to the overlap portion including the object.

Abstract: Nanosheets 21 to 23 are formed in line in this order in the X direction, and nanosheets 24 to 26 are formed in line in this order in the X direction. In a buried interconnect layer, a power line 11 is formed between the nanosheets 22 and 25 as viewed in plan. A face of the nanosheet 22 on a first side as one of the sides in the X direction is exposed from a gate interconnect 32. A face of the nanosheet 25 on a second side as the other side in the X direction is exposed from a gate interconnect 35.

Abstract: A semiconductor device includes a first power supply line, a second power supply line, a first ground line, a switch circuit connected to the first and the second power supply line, and a switch control circuit connected to the first ground line and the first power supply line. The switch circuit includes a first and a second transistor of a first conductive type. A first gate electrode of the first transistor is connected to a second gate electrode of the second transistor. The switch control circuit includes a third transistor of a second conductive type, and a fourth transistor of a third conductive type. A third gate electrode of the third transistor is connected to a fourth gate electrode of the fourth transistor. A semiconductor device includes a signal line that electrically connects a connection point between the third and fourth transistor to the first and second gate electrode.

Abstract: A semiconductor integrated circuit includes a buffer which outputs a memory control signal to a terminal coupled to a memory device, a power supply control circuit which controls a supply of a power supply voltage from a power supply line to the buffer based on a power control signal, a pull-up control circuit configured to control a pull-up of the terminal based on a pull-up control signal, and a control signal generating circuit. The control signal generating circuit generates, during an output period, the power control signal to supply the power supply voltage to the buffer, and the pull-up control signal to stop the pull-up of the terminal, and generates, during an idle period, the power control signal to stop the supply of the power supply voltage to the buffer, and the pull-up control signal to perform the pull-up of the terminal.

Abstract: A camera information calculation device includes a hardware processor. The hardware processor functions as a first calculation unit and a second calculation unit. The first calculation unit calculates, based on a first image and a first video, first camera positional information indicating a position of a first camera. The first image includes a first object taken by the first camera. The first video includes the first object taken by a third camera. The second calculation unit calculates, based on a second image and a second video, second camera positional information indicating a position of a second camera disposed away from the first camera. The second image includes a second object taken by the second camera. The second video includes the second object taken by the third camera.

Abstract: Analogue-to-digital converter, ADC, circuitry, including: an analogue input terminal; a comparator having first and second comparator-input terminals; and successive-approximation control circuitry to apply a potential difference across the first and second comparator-input terminals based on an input voltage signal, and to control the potential difference for a series of successive approximation operations to cause the comparator to test in each successive approximation operation whether a magnitude of an analogue input voltage signal is larger or smaller than a corresponding test value, the test value for each successive approximation operation being, dependent on a comparison result generated by the comparator in the preceding approximation operation, bigger or smaller than the test value for the preceding approximation operation by a difference amount configured for that successive approximation operation.

Abstract: A simulation device includes: a layout setting unit which sets a layout of a power line communication (PLC) network; a parameter setting unit which sets an electrical parameter of the PLC network; a simulation execution unit; and a result output unit which outputs an electrical property obtained by the simulation. The layout setting unit includes: an information obtaining unit which obtains structure information indicating a structure of a building where the PLC network is to be provided and position information of one or more elements included in the PLC network; and a display information output unit which displays, on a display unit that displays information that relates to the PLC network, a diagram that is based on the structure information, and displays at least a portion of the PLC network that is based on the position information such that the portion is superimposed on the diagram.