Abstract: A semiconductor integrated circuit device includes: first and second transistors provided between a first power source and an output terminal; a step-down circuit that generates a second power source from the first power source; a power source switch circuit that outputs, as a fourth power source, a higher one of potentials of the second power source and a third power source; and a level shifter circuit that transits between the first power source and a fourth power source. The first transistor has a gate connected to an output of the level shifter circuit; the second transistor has a gate connected to the fourth power source.

Abstract: A vehicle-mounted device includes a switch unit installed in a traveling object and configured to be operated by an occupant; a speaker unit installed on a far side of the switch unit from the occupant; an air chamber installed on a far side of the speaker unit from the occupant; and a substrate provided between the switch unit and the speaker unit and including at least one opening.

Abstract: A semiconductor device includes a substrate; a circuit region provided with a power supply wiring, a ground wiring, and a signal line; and a first diode connected between the signal line and a first wiring. The first wiring is one of the power supply wiring and the ground wiring. The first diode includes a first impurity region of a first conductive type, electrically connected to the signal line, and a second impurity region of a second conductive type, different from the first conductive type, electrically connected to the first wiring. The signal line, the first wiring, or both is formed in the substrate.

Abstract: With respect to a phase locked loop (PLL) circuit that receives a first reference clock and generates an output clock, the PLL circuit includes a delay circuit that delays the first reference clock to generate a second reference clock, a feedback circuit that generates a control signal based on a phase difference between the second reference clock and a feedback clock, an oscillator that oscillates at a frequency determined based on the control signal to generate the output clock, and a divider that divides the output clock in the on state. The PLL circuit switches between a first mode and a second mode, the feedback clock in the first mode is a signal obtained by retiming an output of the divider with the output clock, and the feedback clock in the second mode is a signal obtained by retiming the first reference clock with the output clock.

Abstract: Alignment circuitry including a first clocked latch for receiving a synchronization signal having an enable edge and a target clock signal and outputting an enable signal having an enable edge corresponding to the enable edge of the synchronization signal and synchronized with the target clock signal; a second clocked latch for receiving the enable signal and a delayed target clock signal, being a version of the target clock signal having been delayed by a delay circuit of the clock-controlled circuitry, and outputting a re-timed enable signal having an enable edge corresponding to the enable edge of the enable signal and synchronized with the delayed target clock signal; and gating circuitry for receiving the delayed target clock signal and the re-timed enable signal and to start output of the delayed target clock signal at a timing defined by the enable edge of the re-timed enable signal for controlling the clock-controlled circuitry.

Abstract: A semiconductor device includes a substrate; a first semiconductor region formed over the substrate; a second semiconductor region formed over the substrate, and electrically connected to the first semiconductor region; a third semiconductor region formed over the substrate, and positioned between the first semiconductor region and the second semiconductor region; a fourth semiconductor region formed over the first semiconductor region; a fifth semiconductor region formed over the second semiconductor region, and electrically connected to the fourth semiconductor region; a sixth semiconductor region formed over the third semiconductor region, and positioned between the fourth semiconductor region and the fifth semiconductor region; and wires formed between the first semiconductor region and the second semiconductor region, and between the fourth semiconductor region and the fifth semiconductor region, to cover the third semiconductor region and the sixth semiconductor region, the wires including conductors.

Abstract: An ultrasonic probe includes a transducer; a pulser; an amplifier; a wireless transmitter; temperature detectors at two or more locations from among a location of the pulser, a location of the amplifier, and a location of the wireless transmitter; and a processor comparing temperatures detected by the temperature detectors with first temperature thresholds set for the temperature detectors, and, when one or more temperature detectors detect temperatures that exceed corresponding first temperature thresholds, selecting any one of low power consumption operating modes based on which temperature detectors are the one or more temperature detectors detecting the temperatures that exceed corresponding first temperature thresholds, and switching an operating mode of each of one or more from among the pulser, the amplifier, and the wireless transmitter from a normal operating mode to the selected low power consumption operating mode.

Abstract: A layout structure of a standard cell using a complementary FET (CFET) is provided. The standard cell includes a first three-dimensional transistor and a second three-dimensional transistor formed above the first transistor in the depth direction, between buried first and second power supply lines. A first contact connects a local interconnect connected to the first transistor and the first power supply line. A second contact connects a local interconnect connected to the second transistor and the second power supply line. The second contact is longer in the depth direction and greater in size in planar view than the first contact.

Abstract: A semiconductor integrated circuit device includes a standard cell having a plurality of height regions. A plurality of partial circuits having an identical function and each operating in response to common signals S and NS are arranged in any one of the height regions. A metal interconnect forming part of a supply path for the common signal S is arranged in the height region so as to be connected to the partial circuits, and a metal interconnect forming part of a supply path for the common signal S is arranged in the height region so as to be connected to the partial circuits.

Abstract: Transistors (N1 to N12) corresponding to drive transistors (PD1, PD2), access transistors (PG1, PG2), read drive transistor (RPD1), and read access transistor (RPG1) are formed in a lower portion of a cell. Transistors (P1, P2) corresponding to load transistors (PU1, PU2), respectively, are formed in an upper portion of the cell. The transistors (P1, P2) overlap the transistors (N3, N8), respectively, in plan view.

Abstract: A layout structure of a capacitance cell using a complementary FET (CFET) is provided. A capacitance part includes a first three-dimensional transistor of a first conductivity type and a second three-dimensional transistor of a second conductivity type formed above the first transistor in the depth direction. The source and drain of the first transistor are both connected to VDD or VSS, and the source and drain of the second transistor are both connected to VDD or VSS. The gates of the first and second transistors are both connected to the gate of a transistor included in a fixed-value output part, and are supplied with VDD or VSS.

Abstract: Provided is an arithmetic method of performing convolution operation in convolutional layers of a neutral network by calculating matrix products. The arithmetic method includes: determining, for each of the convolutional layers, whether an amount of input data to be inputted to the convolutional layer is smaller than or equal to a predetermined amount of data; selecting a first arithmetic mode and performing convolution operation in the first arithmetic mode, when the amount of input data is determined to be smaller than or equal to the predetermined amount of data in the determining; selecting a second arithmetic mode and performing convolution operation in the second arithmetic mode, when the amount of input data is determined to be larger than the predetermined amount of data in the determining; and outputting output data which is a result obtained by performing convolution operation.

Abstract: A steering apparatus according to an aspect of the present disclosure includes a rim member, a center member connected to a steering shaft at a rotation center of the rim member, a first sound output apparatus provided on a front surface of the rim member or the center member, and a first rim chamber unit provided in the rim member and in communication with a space behind the first sound output apparatus.

Abstract: There are an amplifier circuit which includes a first current source that is connected to a power supply line to which a first electric potential is supplied, a differential input circuit that is connected between the first current source and a first node and configured to receive a differential input signal, a second current source that is connected between a power supply line to which a second electric potential is supplied and the first node, and a load circuit that is connected between a power supply line to which the first electric potential is supplied and a second node, and an inductor circuit is further connected between the first node and the second node. Thereby, the amplifier circuit achieves both lower voltage and linearity.

Abstract: A level shift circuit includes first to fourth n-type transistors, first and second p-type transistors, and first and second inverters. The first n-type transistor receives an input signal at its gate and has a drain connected to an inverted output node. The first p-type transistor is placed between a third power supply and the inverted output node. The second n-type transistor receives an inverted input signal at its gate and has a drain connected to an output node. The second p-type transistor is placed between the third power supply and the output node. The third n-type transistor is between the inverted output node and an inverted input node, and the first inverter between the drain and gate of the third n-type transistor. The fourth n-type transistor is between the output node and an input node, and the second inverter between the drain and gate of the fourth n-type transistor.

Abstract: An image encoding method includes, using an image as input, determining a first mode suited to encode the image in accordance with a first processing procedure; using the image as input, determining a second mode suited to encode the image in accordance with a second processing procedure; selecting one of first mode and the second mode as a final mode; encoding the image, using the final mode; and calculating a cost of using the second mode to encode the image. The second processing procedure is implemented by a reconfigurable circuit. In the selecting, the first mode is selected when the cost calculated in the calculating is higher than a first predetermined value, and the second mode is selected when the cost is lower than or equal to the first predetermined value.

Abstract: A layout structure of a ROM cell using a complementary FET (CFET) is provided. The ROM cell includes first and second three-dimensional transistors. The second transistor is formed above the first transistor, and the channel portions of the first and second transistors overlap each other. First data is stored in the ROM cell depending on the presence or absence of connection between a local interconnect connected to the source of the first transistor and a ground power supply line, and second data is stored in the ROM cell depending on the presence or absence of connection between a local interconnect connected to the source of the second transistor and a ground power supply line.

Abstract: A semiconductor integrated circuit device including standard cells including fin transistors includes, at a cell row end, a cell-row-terminating cell that does not contribute to a logical function of a circuit block. The cell-row-terminating cell includes a plurality of fins extending in an X direction. Ends of the plurality of fins on the inner side of the circuit block are near a gate structure placed at a cell end and do not overlap with the gate structure in a plan view, and ends of the plurality of fins on an outer side of the circuit block overlap with any one of a gate structure in a plan view.

Abstract: A current-mode circuit, comprising: at least one switch unit, each switch unit comprising a field-effect transistor connected at its source terminal in series with an impedance and configured to carry a given current, wherein for each switch unit or for at least one of the switch units the impedance is a variable impedance; and an adjustment circuit configured, for each switch unit or for said at least one of the switch units, to adjust an impedance of the variable impedance to calibrate a predetermined property of the switch unit which is dependent on the field-effect transistor.

Abstract: Differential circuitry including first and second current paths each including a succession of first and further load nodes, each successive further load node connected to its preceding load node via a divider impedance; and first switching circuitry connected to the further load node or nodes of the first current path, and second switching circuitry connected to the further load node or nodes of the second current path, the first and second switching circuitry controlling a magnitude of controllable current signals passing through the load nodes of the first current path and the second current path, respectively, wherein: the first load nodes of the first and second current paths include a first pair of load nodes, and the or each successive further load node of the first current path and its corresponding successive further load node of the second current path include a successive further pair of load nodes.