Abstract: The present disclosure provides a self-activation circuit, where the self-activation circuit comprises an N-type metal oxide semiconductor (MOS) transistor Q4, a PNP-type transistor Q2, resistors R20, R21, R24, R25, and a capacitor C2. A first end of the resistor R25 is connected with a detection pin (CS) of the battery protection chip, and a drain electrode of the N-type MOS transistor Q4 is connected with a second end of the resistor R25. A source electrode of the N-type MOS transistor Q4 is connected with a ground end of the storage battery, and a gate electrode of the N-type MOS transistor Q4 is connected with the ground end of the storage battery by the resistor R20.