Abstract: Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0<x?1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.
Type:
Grant
Filed:
December 28, 2018
Date of Patent:
March 1, 2022
Assignee:
Soft-Epi Inc.
Inventors:
Sung Min Hwang, In Sung Cho, Won Taeg Lim, Doo Soo Kim
Abstract: The disclosure relates to an m-plane substrate, a growth inhibitor region located on the m-plane substrate, the growth inhibitor region having a plurality of windows for growing a III-nitride semiconductor, a seed layer formed at least at regions corresponding to the plurality of windows on the m-plane substrate, and a III-nitride semiconductor layer grown from the seed layer and coalesced after propagated along a-axis and c-axis directions.
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