Patents Assigned to SOL VOLTAICS AB
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Patent number: 10196755Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.Type: GrantFiled: January 19, 2017Date of Patent: February 5, 2019Assignee: SOL VOLTAICS ABInventors: Greg Alcott, Martin Magnusson, Olivier Postel, Knut Deppert, Lars Samuelson, Jonas Ohlsson
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Patent number: 10177264Abstract: A method for transferring an assembly of oriented nanowires from a liquid interface onto a surface including providing a first liquid and a second liquid, wherein the first and second liquids phase separate into a bottom phase, a top phase and an interface between the bottom phase and the top phase, providing nanowires in the first and second liquids such that the majority of the nanowires are located at the interface and providing the nanowires onto a substrate such that a majority of the nanowires are aligned with respect to each other on the substrate.Type: GrantFiled: April 28, 2015Date of Patent: January 8, 2019Assignee: SOL VOLTAICS ABInventors: Umear Naseem, Johan Borgström, Jaime Castillo-Léon, Per Viklund
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Patent number: 10037831Abstract: A nanowire device and a method of making a nanowire device are provided. The device includes a plurality of nanowires functionalized with different functionalizing compounds. The method includes functionalizing the nanowires with a functionalizing compound, dispersing the nanowires in a polar or semi-polar solvent, aligning the nanowires on a substrate such that longitudinal axes of the nanowires are oriented about perpendicular to a major surface of the substrate, and fixing the nanowires to the substrate.Type: GrantFiled: April 11, 2013Date of Patent: July 31, 2018Assignee: SOL VOLTAICS ABInventors: Tommy Mikael Garting, Maria Huffman, Lars Göran Stefan Ulvenlund, Johan Eric Borgström, Umear Naseem
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Patent number: 9951420Abstract: A nanoparticles aerosol generator is disclosed. The nanoparticles aerosol generator includes an evaporation chamber having a wall, a container containing a source material, and a heating device configured to heat the source material. The nanoparticles aerosol generator also includes a carrier gas source configured to blow a carrier gas toward the source material to generate a nanoparticles aerosol with nanoparticles of the source material suspended therein. The nanoparticles aerosol generator further includes a dilution gas source configured to supply a dilution gas into the chamber to flow substantially along the wall within the chamber and to dilute the nanoparticles aerosol.Type: GrantFiled: November 10, 2014Date of Patent: April 24, 2018Assignee: SOL VOLTAICS ABInventor: Greg Alcott
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Patent number: 9818830Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: GrantFiled: July 28, 2016Date of Patent: November 14, 2017Assignee: SOL VOLTAICS ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Patent number: 9574286Abstract: A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.Type: GrantFiled: May 24, 2013Date of Patent: February 21, 2017Assignee: SOL VOLTAICS ABInventors: Greg Alcott, Martin Magnusson, Olivier Postel, Knut Deppert, Lars Samuelson, Jonas Ohlsson
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Patent number: 9419086Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: GrantFiled: March 27, 2015Date of Patent: August 16, 2016Assignee: SOL VOLTAICS ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Patent number: 9012883Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: GrantFiled: December 21, 2012Date of Patent: April 21, 2015Assignee: Sol Voltaics ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Patent number: 8952354Abstract: A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate (3) having a surface (31), wherein a region (4) at the surface (31) of the substrate (3) is doped such that a first p-n junction is formed in the substrate (3). The photovoltaic cell has a nanowire (2) that is arranged on the surface (31) of the substrate (3) at a position where the doped region (4) is located in the substrate (3), such that a second p-n junction is formed at the nanowire (2) and in series connection with the first p-n junction.Type: GrantFiled: April 13, 2010Date of Patent: February 10, 2015Assignee: Sol Voltaics ABInventor: Jerry M. Olson
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Publication number: 20140175372Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: ApplicationFiled: December 21, 2012Publication date: June 26, 2014Applicant: SOL VOLTAICS ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Publication number: 20120199187Abstract: The present invention provides a tunnel diode and a method for manufacturing thereof. The tunnel diode comprises a p-doped semiconductor region and an n-doped semiconductor region forming a pn-junction at least partly within a nanowire where semiconductor materials on different sides of the pn-junction are different such that a heterojuction is formed. The materials of the nanowire may be compound semiconductor materials. The heterojunction tunnel diode can be of type-I (Straddling gap), type-II (Staggered gap) or type-III (Broken gap).Type: ApplicationFiled: October 22, 2010Publication date: August 9, 2012Applicant: Sol Voltaics ABInventors: Magnus Borgström, Magnus Heurlin, Stefan Fält
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Publication number: 20120032148Abstract: A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate (3) having a surface (31), wherein a region (4) at the surface (31) of the substrate (3) is doped such that a first p-n junction is formed in the substrate (3). The photovoltaic cell has a nanowire (2) that is arranged on the surface (31) of the substrate (3) at a position where the doped region (4) is located in the substrate (3), such that a second p-n junction is formed at the nanowire (2) and in series connection with the first p-n junction.Type: ApplicationFiled: April 13, 2010Publication date: February 9, 2012Applicant: SOL VOLTAICS ABInventor: Jerry M. Olson