Abstract: A phase-change recording film with stable crystallization rate and a composite target for producing the film are composed of 10 to 50 atomic percent of phase-change material containing Te or Sb and 50 to 90 atomic percent of dielectric material. Another target for producing the film is composed of dielectric material and a phase-change material containing Te or Sb attached to the dielectric material. A co-sputtering process for producing the film uses a target made of dielectric material and a target made of phase-change material containing Te or Sb to co-sputter. Because the crystallization rate of the phase-change recording film does not change as the thickness of phase-change recording film varies, manufacturing the phase-change recording film does not require to be precisely controlled unduly.

Abstract: A method for producing metal sputtering target, comprising a step of double V melting process, and a step of high temperature forging. The step of double V melting process produces a single metal of aluminum, titanium, or copper, or an alloy of the single metal associated with at least a different metal selecting from one of copper, silicon, titanium, zirconium, osmium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, and scandium. The step of high temperature forging treats the single metal or the alloy to form the metal sputtering target material with small crystal grains and a secondary phase of fineness and high homogeneity suitable for using in semiconductor and photoelectric industries.