Abstract: Provided is a non-ferromagnetic spacing composite layer, comprising first, second and third spacing layers stacked in sequence. The first and third spacing layers are each made of Re, Rh, Ir, W, Mo, Ta, or Nb, and the second spacing layer is made of Ru. The second spacing layer has a thickness of equal to or more than 0.18 nm, and the non-ferromagnetic spacing composite layer has a total thickness of 0.6 nm to 1 nm. Also, provided are a method of preparing the non-ferromagnetic spacing composite layer, a synthetic antiferromagnetic laminated structure, and an MRAM. The synthetic antiferromagnetic laminated structure can maintain a certain coupling strength and the RKKY indirect interaction after thermal treatment, thereby keeping the recording function of MRAM.

Abstract: A boron-doped zinc oxide sputtering target, BZO sputtering target, is provided to deposit a BZO film by direct current sputtering. The BZO sputtering target has an amount of B/(B+Zn) ranging from 1.15 atomic % to 6.74 atomic % and a second phase ranging from 2% to 25% relative to a total area of the matrix phase and the second phase. Accordingly, a BZO film having a transmittance higher than 80% within a wavelength from 400 nanometers to 1100 nanometers and a resistivity less than 1×10?2 ?-cm can be prepared by DC sputtering the BZO sputtering target.

Abstract: The present invention provides a sputtering target having alarm function. The sputtering target comprises: a target body including a target material and having a bonding plane; a backing body bonded with the bonding plane of the target body; and at least one alarm body embedded in the target body. Wherein, a length of each alarm body, ratios of an area of each alarm body and the sum of area(s) of the at least one alarm body projected onto the bonding plane relative to an area of the bonding plane are controlled in a suitable range. Thus, the bonding strength and the heat-removing efficiency of the sputtering target can be maintained, and the distinguishable material of the alarm body can evolve a gas component distinguishable from a sputtering environment serving as an alarm signal for stopping the sputtering process in time.

Abstract: The present invention is related to a target, which is a magnesium monoxide-based (MgO-based) composite having cubic crystal structure of MgO, wherein the MgO-based composite includes MgO and one or more oxides. Using MgO-based composite to form an underlayer material can improve the bonding strength among particles in the target, and then effectively reduce the falling of particles from the targets during sputtering. In addition, the MgO-based composite still maintains the cubic crystal structure of MgO, which is beneficial to make a MgO-based composites as an underlayer material in a magnetic recording medium. The invention is also related to an underlayer material for cobalt-based (Co-based) or iron-based (Fe-based) magnetic recording media. The invention is further related to a magnetic recording medium.

Abstract: A method of electrochemical dissolution of ruthenium-cobalt (Ru—Co)-based alloy is disclosed, in which a Ru—Co-based alloy bulk is subjected into an electrolyte solution comprising about 50 wt. % to 75 wt. % of sulfuric acid, thereby electrolyzing the Ru—Co-based alloy bulk and forming a product solution comprising Ru and Co ions in the electrolyte solution.

Abstract: Provided is a CoCrPt-based alloy sputtering target containing cobalt (Co), chromium (Cr), platinum (Pt), cobalt oxide and non-magnetic oxide composition, wherein the lengths of ceramic phases of Cr2O3 and Co(Cr)—X—O formed in the sputtering targets are respectively less than 3 ?m (“X” represents the metal element of the non-magnetic oxide). The sputtering target is obtained via controlling suitable composition proportion of the prealloy powder with Cr and the sintering factor to decrease the size of ceramic phases of Cr2O3 and Co(Cr)—X—O. Sputtering targets made by the methods of the present invention decrease the arcing effects and unnecessary formation of particles upon sputtering in addition to making the components of the sputtering targets distribute more uniformly therein.

Abstract: Disclosed is a sputtering target and its application to the recording material of hard disks wherein the sputtering target comprises cobalt-platinum (CoPt), cobalt-chrome-platinum (CoCrPt) or cobalt-chrome-platinum-boron (CoCrPtB) and a combination of oxides. A recording material is formed by the sputtering target through the sputtering process as a high areal recording density hard disk, which essentially has silica oxide (SiO2) and Cr2O3, wherein the amount of silica oxide (SiO2) ranges from 4 to 8 atomic % and the amount of chromium oxide (Cr2O3) ranges from 0.8 atomic % to 5 atomic %. The present invention is characterized by Cr2O3 as an oxygen supplier during sputtering process to donate oxygen to the oxygen defects. The sputtering target containing the combination of oxides is used to form a recording material applied as a recording layer of magnetic recording medium of hard disks, resulting in enhancement of the areal recording density of medium storage.

Abstract: The present invention provides a sputtering target essentially consisting of cobalt-platinum-copper oxide-oxide (CoPt—CuO-oxide), cobalt-chrome-platinum-copper oxide-oxide (CoCrPt—CuO-oxide), or cobalt-chrome-platinum-boron-copper oxide-oxide (CoCrPtB—CuO-oxide) with addition of CuO. The sputtering target is applied to a recording material of a magnetic recording medium. The thickness of the oxide grain boundary in the sputtering target is reduced, resulting from the decreased amount of oxide in the sputtering target, to allow a sputtering process utilizing the same to become more stable. Further, the volume of the magnetic grains per unit area is increased, whereby a better thermal stability and a high recording density are acquired.

Abstract: A hollow target assembly has a support tube, a target body and a plurality of elastic elements. The target body includes a plurality of hollow target materials and they pass through the support tube sequentially and locate at the outer surface of the support tube. By the grooves formed and extended from an end of the inside wall of the hollow target material and the corresponding concaves formed at the outside wall of the support tube, the elastic elements can lean and be positioned in the space generated by the grooves and corresponding concaves. Therefore, the target body and the support tube are brought together closely by these elastic elements in a simple and a low-cost way.

Abstract: A method of electrochemical dissolution of ruthenium-cobalt (Ru—Co)-based alloy is disclosed, in which a Ru—Co-based alloy bulk is subjected into an electrolyte solution comprising about 50 wt. % to 75 wt. % of sulfuric acid, thereby electrolyzing the Ru—Co-based alloy bulk and forming a product solution comprising Ru and Co ions in the electrolyte solution.

Abstract: A rotary target assembly has a cylindrical target and a cylindrical backing tube. A difference between an inner diameter of the cylindrical target and an outer diameter of the cylindrical backing tube substantially equals a yield strain of a target material multiplied by the inner diameter of the cylindrical target and multiplied by N, wherein N is between 1 and 10. The difference can be adjusted according to the target material, dimension of the cylindrical target, so the cylindrical target can be combined tightly with cylindrical backing tube. A resulting rotary target of the present invention has improved thermal and electrical conductivities.

Abstract: A method for producing a sputtering target containing boron has steps of providing cobalt-chromium (Co·Cr) prealloy powder, mixing Co·Cr prealloy powder and raw material powder containing boron and oxide to form a mixture, preforming the mixture to form a green compact, and sintering the green compact to obtain the sputtering target containing boron. Because Co·Cr prealloy powder is provided, then is mixed with boron, oxide or the like, size and distribution of boride particles can be efficiently controlled. Therefore, Co, Cr, B or the like are uniformly distributed in the sputtering target.

Abstract: A method for the recovery of copper, indium, gallium, and selenium is provided. The method includes steps of using a mixed solution containing a hydrochloric acid and hydrogen peroxide to dissolve the copper, indium, gallium, and selenium. After using the hydrazine to separate the selenium out, the copper is reduced by indium metal. Later, a combination of a supported liquid membrane (SLM) and a strip dispersion solution separates the gallium from the indium. The acid performed in all the steps of the method is hydrochloric acid. Therefore, the copper, indium, gallium, and selenium can be separated one by one in a single production line without changing the solution during the operation process, thereby simplifying the process, shortening the operation time and lowering the manufacture cost.

Abstract: A method for producing a ceramic sputtering target assembly has steps of providing a backing plate and forming a solder layer on a surface of the backing plate; providing a ceramic target and forming an interface layer on a surface of the ceramic target; annealing the ceramic target with the interface layer; and solder-bonding the solder layer of the backing plate and the interface layer of the ceramic target to obtain the ceramic sputtering target assembly. By annealing the interface layer made of chromium or chromium-containing alloy, the interface layer provides excellent adhesive ability to solder-bonding the solder layer and allows the ceramic target and the backing plate to be combined securely.

Abstract: The present invention provides a process for the removal and recovery of indium from waste waters and process streams. The process of the present invention utilizes a combination of a supported liquid membrane (SLM) and a strip dispersion to improve extraction of indium while increasing membrane stability and decreasing processing costs. This novel process selectively removes indium from the feed stream, provides the increased flexibility of aqueous strip/organic volume ratio, and produces a concentrated strip solution of indium.

Abstract: The present invention provides a novel process for the removal and recovery of gallium from a feed solution containing the gallium and copper. The process of the present invention utilizes a combination of a supported liquid membrane (SLM) and a strip dispersion to improve extraction of gallium while increasing membrane stability and decreasing processing costs. This novel process selectively removes gallium from feed solution containing the gallium and copper.

Abstract: A method for making a refurbished sputtering target has steps of providing a spent target with a backside, an eroded side and a rim; mechanically pre-treating the backside of the spent target; applying powder material that has the same composition as the spent target to form a powder-filled layer; and sequentially pre-pressing and sintering the spent target with the powder-filled layer to obtain the refurbished sputtering target. Therefore, a percentage of the spent target is reduced by mechanically treating the backside of the spent target, so the refurbished sputtering target has a consistent quality.

Abstract: A method for fabricating a copper-gallium alloy sputtering target comprises forming a raw target; treating the raw target with at least one thermal treatment between 500° C.˜850° C. being mechanical treatment, thermal annealing treatment for 0.5˜5 hours or a combination thereof to form a treated target; and cooling the treated target to a room temperature to obtain the copper-gallium alloy sputtering target that has 71 atomic % to 78 atomic % of Cu and 22 atomic % to 29 atomic % of Ga and having a compound phase not more than 25% on its metallographic microstructure. Therefore, the copper-gallium alloy sputtering target does not induce micro arcing during sputtering so a sputtering rate is consistent and forms a uniform copper-gallium thin film. Accordingly, the copper-gallium thin film possesses improved quality and properties.

Abstract: A phase-change recording film with stable crystallization rate and a composite target for producing the film are composed of 10 to 50 atomic percent of phase-change material containing Te or Sb and 50 to 90 atomic percent of dielectric material. Another target for producing the film is composed of dielectric material and a phase-change material containing Te or Sb attached to the dielectric material. A co-sputtering process for producing the film uses a target made of dielectric material and a target made of phase-change material containing Te or Sb to co-sputter. Because the crystallization rate of the phase-change recording film does not change as the thickness of phase-change recording film varies, manufacturing the phase-change recording film does not require to be precisely controlled unduly.

Abstract: A method for producing metal sputtering target, comprising a step of double V melting process, and a step of high temperature forging. The step of double V melting process produces a single metal of aluminum, titanium, or copper, or an alloy of the single metal associated with at least a different metal selecting from one of copper, silicon, titanium, zirconium, osmium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, and scandium. The step of high temperature forging treats the single metal or the alloy to form the metal sputtering target material with small crystal grains and a secondary phase of fineness and high homogeneity suitable for using in semiconductor and photoelectric industries.