Patents Assigned to Solar Junction Corp.
  • Lattice Matchable Alloy for Solar Cells
    Publication number: 20130130431
    Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSb, with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open. circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.
    Type: Application
    Filed: January 11, 2013
    Publication date: May 23, 2013
    Applicant: Solar Junction Corp.
    Inventor: Solar Junction Corp.
  • LATTICE MATCHABLE ALLOY FOR SOLAR CELLS
    Publication number: 20130014815
    Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content, and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 17, 2013
    Applicant: Solar Junction Corp
    Inventors: Rebecca Elizabeth Jones, Homan Bernard Yuen, Ting Liu, Pranob Misra
  • LATTICE MATCHABLE ALLOY FOR SOLAR CELLS
    Publication number: 20110232730
    Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.
    Type: Application
    Filed: March 29, 2010
    Publication date: September 29, 2011
    Applicant: Solar Junction Corp.
    Inventors: Rebecca Elizabeth Jones, Homan Bernard Yuen, Ting Liu, Pranob Misra
  • Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells
    Publication number: 20100319764
    Abstract: Tunnel junctions are improved by providing a rare earth-Group V interlayer such as erbium arsenide (ErAs) to yield a mid-gap state-assisted tunnel diode structure. Such tunnel junctions survive thermal energy conditions (time/temperature) in the range required for dilute nitride material integration into III-V multi-junction solar cells.
    Type: Application
    Filed: June 21, 2010
    Publication date: December 23, 2010
    Applicant: Solar Junction Corp.
    Inventors: Michael W. Wiemer, Homan B. Yuen, Vijit A. Sabnis, Michael J. Sheldon, Ilya Fushman