Patents Assigned to SolAround Ltd.
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Patent number: 11387382Abstract: The invention provides a bifacial photovoltaic cell comprising: a semiconductor substrate, the substrate comprising an n+ layer on a first surface, and a p+ layer on a second surface. The n+ layer comprises an n-dopant and the p+ layer comprises a p-dopant. The cell further comprises a passivating and/or antireflective coating on the doped first and second surfaces. The cell is characterized in that the second surface of the semiconductor substrate has an area substantially devoid of the p-dopant on an edge of the second surface having a width in the range of 0.1-0.5 mm; wherein the area is formed by etching the semiconductor substrate.Type: GrantFiled: June 23, 2021Date of Patent: July 12, 2022Assignee: SOLAROUND LTD.Inventors: Naftali Paul Eisenberg, Lev Kreinin
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Patent number: 11171254Abstract: A method of producing a bifacial photovoltaic cell is disclosed herein, the method comprising: forming a boron-containing layer on a second surface of a semiconductor substrate; forming a cap layer above the boron-containing layer; effecting simultaneously: i) deposition on the first surface and ii) diffusion into it of the phosphorous using POCl3 gas phase process and iii) diffusion of the boron into the second surface of the substrate, to thereby dope the first surface with n-dopant and the second surface with boron.Type: GrantFiled: December 27, 2018Date of Patent: November 9, 2021Assignee: SOLAROUND LTD.Inventors: Naftali Paul Eisenberg, Lev Kreinin, Ygal Eisenberg
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Publication number: 20210328090Abstract: The invention provides a bifacial photovoltaic cell comprising: a semiconductor substrate, the substrate comprising an n+ layer on a first surface, and a p+ layer on a second surface. The n+ layer comprises an n-dopant and the p+ layer comprises a p-dopant. The cell further comprises a passivating and/or antireflective coating on the doped first and second surfaces. The cell is characterized in that the second surface of the semiconductor substrate has an area substantially devoid of the p-dopant on an edge of the second surface having a width in the range of 0.1-0.5 mm; wherein the area is formed by etching the semiconductor substrate.Type: ApplicationFiled: June 23, 2021Publication date: October 21, 2021Applicant: SOLAROUND LTD.Inventors: Naftali Paul Eisenberg, Lev Kreinin
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Patent number: 11075316Abstract: A method of producing a bifacial photovoltaic cell is disclosed herein, the method comprising: a) forming an n-dopant-containing layer on a first surface of a semiconductor substrate; b) forming a boron-containing layer on a second surface of the substrate by sputtering boron and/or by boron ion implantation; and c) effecting diffusion of the n-dopant and boron into the substrate, to dope the first surface with the n-dopant and the second surface with the boron. Further disclosed herein are bifacial photovoltaic cells, as well as photovoltaic modules, power plants and electric devices comprising said photovoltaic cells, comprising a semiconductor substrate, an n+ layer on a first surface thereof and a boron-containing p+ layer on a second surface thereof, wherein a variability of boron concentration in the p+ layer is no more than 5%.Type: GrantFiled: October 25, 2016Date of Patent: July 27, 2021Assignee: SolAround Ltd.Inventors: Naftali Paul Eisenberg, Lev Kreinin
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Publication number: 20210066527Abstract: A method of producing a bifacial photovoltaic cell is disclosed herein, the method comprising: forming a boron-containing layer on a second surface of a semiconductor substrate; forming a cap layer above the boron-containing layer; effecting simultaneously: i) deposition on the first surface and ii) diffusion into it of the phosphorous using POCl3 gas phase process and iii) diffusion of the boron into the second surface of the substrate, to thereby dope the first surface with n-dopant and the second surface with boron.Type: ApplicationFiled: December 27, 2018Publication date: March 4, 2021Applicant: SOLAROUND LTD.Inventors: Naftali Paul EISENBERG, Lev Kreinin, Ygal Eisenberg
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Publication number: 20190109257Abstract: A method of producing a bifacial photovoltaic cell is disclosed herein, the method comprising: a) forming an n-dopant-containing layer on a first surface of a semiconductor substrate; b) forming a boron-containing layer on a second surface of the substrate by sputtering boron and/or by boron ion implantation; and c) effecting diffusion of the n-dopant and boron into the substrate, to dope the first surface with the n-dopant and the second surface with the boron. Further disclosed herein are bifacial photovoltaic cells, as well as photovoltaic modules, power plants and electric devices comprising said photovoltaic cells, comprising a semiconductor substrate, an n+ layer on a first surface thereof and a boron-containing p+ layer on a second surface thereof, wherein a variability of boron concentration in the p+ layer is no more than 5%.Type: ApplicationFiled: October 25, 2016Publication date: April 11, 2019Applicant: SolAround Ltd.Inventors: Naftali Paul Eisenberg, Lev Kreinin