Abstract: A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blende-type BP layer formed on an Si substrate, an AlyInxGazN (y?0, x>0) crystal as a mother crystal maintaining the zinc blende-type crystal structure and In dots having an In concentration higher than that of the AlyInxGazN (y?0, x>0) crystal as the mother crystal.

Abstract: A method for producing a GaN-based crystal includes forming a Zinc-blende type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blende type structure; and forming a Zinc-blende type GaN-based crystal layer on the In-containing layer. The In-containing layer is a metallic In layer having a thickness of 4 atom layers or less, an InGaN layer having a thickness of 2 nm or less, an InAl mixture layer having a thickness of 4 atom layers or less and containing Al at 10% or less, or an AlInGaN layer having a thickness of 2 nm or less and containing Al at 10% or less.