Abstract: A process for manufacturing colloidal nanosheet, by lateral growth, on an initial colloidal nanocrystal, of a crystalline semiconductor material represented by the formula MnXy, where M is a transition metal and X a chalcogen. The process includes the following steps: The preparation of a first organic solution, non or barely coordinating used as a synthesis solvent and including at least one initial colloidal nanocrystal; The preparation of a second organic solution including precursors of M and X, and including an acetate salt. And the slow introduction over a predetermined time scale of a predetermined amount of the second solution in a predetermined amount of the first solution, at a predetermined temperature for the growth of nanosheets. The use of the obtained material is also presented.

Abstract: The present invention relates to a process for manufacturing a colloidal material, to colloidal materials obtainable by this process and to uses of said colloidal material for the manufacture of optic devices. The colloidal material obtainable by the process of the present invention is of formula AnXm, wherein A is an element selected from groups II, III or IV of the periodic table, wherein X is a metal selected from groups V or VI of the periodic table, and wherein, in the selection of the pair (A, X), the groups of the periodic table of A and X, respectively, are selected from the following combinations: (group II, group VI), (group III, group V) or (group IV, group VI); and wherein n and m are such that AnXm is a neutral compound. For example, the colloidal compound obtainable by the process of the present invention may be CdS, In P, or PbS. Other examples are provided below.