Abstract: Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.

Abstract: An electroluminescent device contains (1) first and second electrodes, at least one of which is transparent to radiation; (2) a hole conducting layer containing first nanoparticles wherein the hole conducting layer is in contact with said first electrode; (3) an electron conducting layer containing second nanoparticles where the electron conducting layer is in contact with the hole conducting layer and the second electrode; and optionally (4) a voltage source capable of providing positive and negative voltage, where the positive pole of the voltage source is connected to the first electrode and the negative pole is connected to the second electrode. In some embodiments, the electroluminescent device also includes an electron-hole combination layer between the hole and electron conducting layers.

Abstract: A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing therebetween. A polycrystalline semiconductor layer is disposed over the buffer layer.

Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions. The present invention also discloses methods for making and surface treatments for thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration to create devices with improved junctions.

Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.

Abstract: An electroluminescent device contains (1) first and second electrodes, at least one of which is transparent to radiation; (2) a hole conducting layer containing first nanoparticles wherein the hole conducting layer is in contact with said first electrode; (3) an electron conducting layer containing second nanoparticles where the electron conducting layer is in contact with the hole conducting layer and the second electrode; and optionally (4) a voltage source capable of providing positive and negative voltage, where the positive pole of the voltage source is connected to the first electrode and the negative pole is connected to the second electrode. In some embodiments, the electroluminescent device also includes an electron-hole combination layer between the hole and electron conducting layers.

Abstract: Photovoltaic devices are disclosed that have built in shunt resistance. The devices comprise shunt isolation lines in the electrodes such that shunts will not degrade the efficiency of each individual unit cell. The device is easy to manufacture and the invention is suitable for use with most photovoltaic device architectures.

Abstract: Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.

Abstract: The present invention discloses novel thin film photovoltaic devices with monolithic integration and backside metal contacts and methods of making the devices. The innovative approach described in the present invention allows for devices and methods of construction completely through thin-film processes. Solar cells in accordance with the present invention provide an increased output for large devices due to decreased current loss in the transparent conducting electrode.

Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions. The present invention also discloses methods for making and surface treatments for thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration to create devices with improved junctions.

Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.

Abstract: The invention describes a process and apparatus for making a photovoltaic device in a continuous roll to roll process. The fabrication apparatus in accordance with the present invention is quite novel and non-obvious and provides capital efficiency and advantages in processing for thin film solar cells.

Abstract: Photovoltaic devices or solar cells are provided. More particularly, the present invention provides photovoltaic devices having IR and/or UV absorbing nanostructured layers that increase efficiency of solar cells. In some embodiments the nanostructured materials are integrated with one or more of: crystalline silicon (single crystal or polycrystalline) solar cells and thin film (amorphous silicon, microcrystalline silicon, CdTe, CIGS and III-V materials) solar cells whose absorption is primarily in the visible region. In some embodiments the nanoparticle materials are comprised of quantum dots, rods or multipods of various sizes.