Patents Assigned to Solexant Corp.
-
Patent number: 8410357Abstract: Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.Type: GrantFiled: January 28, 2010Date of Patent: April 2, 2013Assignee: Solexant Corp.Inventors: Puthur D. Paulson, Craig Leidholm, Damoder Reddy, Charlie Hotz
-
Publication number: 20130020550Abstract: An electroluminescent device contains (1) first and second electrodes, at least one of which is transparent to radiation; (2) a hole conducting layer containing first nanoparticles wherein the hole conducting layer is in contact with said first electrode; (3) an electron conducting layer containing second nanoparticles where the electron conducting layer is in contact with the hole conducting layer and the second electrode; and optionally (4) a voltage source capable of providing positive and negative voltage, where the positive pole of the voltage source is connected to the first electrode and the negative pole is connected to the second electrode. In some embodiments, the electroluminescent device also includes an electron-hole combination layer between the hole and electron conducting layers.Type: ApplicationFiled: April 20, 2012Publication date: January 24, 2013Applicant: Solexant Corp.Inventor: Damoder Reddy
-
Patent number: 8236603Abstract: A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing therebetween. A polycrystalline semiconductor layer is disposed over the buffer layer.Type: GrantFiled: September 4, 2009Date of Patent: August 7, 2012Assignees: Solexant Corp., Rochester Institute of TechnologyInventors: Leslie G. Fritzemeier, Ryne P. Raffaelle, Christopher Leitz
-
Patent number: 8143512Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions. The present invention also discloses methods for making and surface treatments for thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration to create devices with improved junctions.Type: GrantFiled: March 24, 2009Date of Patent: March 27, 2012Assignee: Solexant Corp.Inventors: Puthur D. Paulson, Charlie Hotz, Craig Leidholm, Damoder Reddy
-
Publication number: 20120067408Abstract: The present invention discloses an absorber composition and photovoltaic device (PV) using the composition comprising nanoparticles and/or sintered nanoparticles comprising compounds having the formula MAxMByMCz(LAaLBb)4 where MA, MB and MC comprise elements chosen from the group consisting of Fe, Co, Ni, Cu, Zn, Cd, Sn and Pb, LA and LB are chalcogens and x is between 1.5 and 2.2, y and z are independently the same or different and are between 0.5 and 1.5 and (a+b)=1. Particularly preferred synthetic routes to uniform thin films in PV devices comprising sintered nanoparticles of Cu2ZnSnSe4 and Cu2ZnSnS4 are disclosed.Type: ApplicationFiled: September 16, 2010Publication date: March 22, 2012Applicant: SOLEXANT CORP.Inventors: Charlie Hotz, Margaret Hines, Donald Zehnder, Damoder Reddy, Jing Tang
-
Publication number: 20110061737Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.Type: ApplicationFiled: November 21, 2010Publication date: March 17, 2011Applicant: SOLEXANT CORP.Inventors: Charlie Hotz, Puther D. Paulson, Craig Leidholm, Damoder Reddy
-
Patent number: 7858872Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.Type: GrantFiled: March 13, 2009Date of Patent: December 28, 2010Assignee: Solexant Corp.Inventors: Charlie Hotz, Puthur D. Paulson, Craig Leidholm, Damoder Reddy
-
Publication number: 20100320442Abstract: An electroluminescent device contains (1) first and second electrodes, at least one of which is transparent to radiation; (2) a hole conducting layer containing first nanoparticles wherein the hole conducting layer is in contact with said first electrode; (3) an electron conducting layer containing second nanoparticles where the electron conducting layer is in contact with the hole conducting layer and the second electrode; and optionally (4) a voltage source capable of providing positive and negative voltage, where the positive pole of the voltage source is connected to the first electrode and the negative pole is connected to the second electrode. In some embodiments, the electroluminescent device also includes an electron-hole combination layer between the hole and electron conducting layers.Type: ApplicationFiled: August 31, 2010Publication date: December 23, 2010Applicant: SOLEXANT CORP.Inventor: Damoder Reddy
-
Patent number: 7800297Abstract: An electroluminescent device contains (1) first and second electrodes, at least one of which is transparent to radiation; (2) a hole conducting layer containing first nanoparticles wherein the hole conducting layer is in contact with said first electrode; (3) an electron conducting layer containing second nanoparticles where the electron conducting layer is in contact with the hole conducting layer and the second electrode; and optionally (4) a voltage source capable of providing positive and negative voltage, where the positive pole of the voltage source is connected to the first electrode and the negative pole is connected to the second electrode. In some embodiments, the electroluminescent device also includes an electron-hole combination layer between the hole and electron conducting layers.Type: GrantFiled: February 20, 2007Date of Patent: September 21, 2010Assignee: Solexant Corp.Inventor: Damoder Reddy
-
Publication number: 20100229914Abstract: Photovoltaic devices are disclosed that have built in shunt resistance. The devices comprise shunt isolation lines in the electrodes such that shunts will not degrade the efficiency of each individual unit cell. The device is easy to manufacture and the invention is suitable for use with most photovoltaic device architectures.Type: ApplicationFiled: February 9, 2010Publication date: September 16, 2010Applicant: Solexant Corp.Inventors: Paul M. Adriani, Shandor Daroczi, Damoder Reddy
-
Publication number: 20100229931Abstract: Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.Type: ApplicationFiled: January 28, 2010Publication date: September 16, 2010Applicant: Solexant Corp.Inventors: Damoder Reddy, Charlie Hotz, Puthur D. Paulson, Craig Leidholm
-
Publication number: 20090301543Abstract: The present invention discloses novel thin film photovoltaic devices with monolithic integration and backside metal contacts and methods of making the devices. The innovative approach described in the present invention allows for devices and methods of construction completely through thin-film processes. Solar cells in accordance with the present invention provide an increased output for large devices due to decreased current loss in the transparent conducting electrode.Type: ApplicationFiled: June 1, 2009Publication date: December 10, 2009Applicant: Solexant Corp.Inventors: Damoder Reddy, Craig Leidholm, Brian Gergen
-
Publication number: 20090242029Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions. The present invention also discloses methods for making and surface treatments for thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration to create devices with improved junctions.Type: ApplicationFiled: March 24, 2009Publication date: October 1, 2009Applicant: Solexant Corp.Inventors: Puthur Paulson, Charlie Hotz, Craig Leidholm, Damoder Reddy
-
Publication number: 20090235986Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.Type: ApplicationFiled: March 13, 2009Publication date: September 24, 2009Applicant: Solexant CorpInventors: Charlie Hotz, Puthur D. Paulson, Craig Leidholm, Damoder Reddy
-
Publication number: 20090223551Abstract: The invention describes a process and apparatus for making a photovoltaic device in a continuous roll to roll process. The fabrication apparatus in accordance with the present invention is quite novel and non-obvious and provides capital efficiency and advantages in processing for thin film solar cells.Type: ApplicationFiled: March 2, 2009Publication date: September 10, 2009Applicant: Solexant Corp.Inventors: Damoder Reddy, Craig Leidholm
-
Publication number: 20080230120Abstract: Photovoltaic devices or solar cells are provided. More particularly, the present invention provides photovoltaic devices having IR and/or UV absorbing nanostructured layers that increase efficiency of solar cells. In some embodiments the nanostructured materials are integrated with one or more of: crystalline silicon (single crystal or polycrystalline) solar cells and thin film (amorphous silicon, microcrystalline silicon, CdTe, CIGS and III-V materials) solar cells whose absorption is primarily in the visible region. In some embodiments the nanoparticle materials are comprised of quantum dots, rods or multipods of various sizes.Type: ApplicationFiled: February 12, 2007Publication date: September 25, 2008Applicant: Solexant Corp.Inventor: Damoder Reddy
-
Publication number: 20080110494Abstract: In general, the invention relates to the field of photovoltaics or solar cells. More particularly the invention relates to photovoltaic devices using metal oxide nanostructures in connection with photoactive nanoparticles including nanoparticles of different size and composition to form a photovoltaic device.Type: ApplicationFiled: February 15, 2007Publication date: May 15, 2008Applicant: SOLEXANT CORP.Inventor: Damoder Reddy
-
Publication number: 20080066802Abstract: This invention relates to photovoltaic devices made with photoactive nanostructures comprising carbon nanotubes and photosensitive nanoparticles.Type: ApplicationFiled: March 22, 2007Publication date: March 20, 2008Applicant: SOLEXANT CORP.Inventor: Damoder Reddy
-
Publication number: 20070194694Abstract: An electroluminescent device contains (1) first and second electrodes, at least one of which is transparent to radiation; (2) a hole conducting layer containing first nanoparticles wherein the hole conducting layer is in contact with said first electrode; (3) an electron conducting layer containing second nanoparticles where the electron conducting layer is in contact with the hole conducting layer and the second electrode; and optionally (4) a voltage source capable of providing positive and negative voltage, where the positive pole of the voltage source is connected to the first electrode and the negative pole is connected to the second electrode. In some embodiments, the electroluminescent device also includes an electron-hole combination layer between the hole and electron conducting layers.Type: ApplicationFiled: February 20, 2007Publication date: August 23, 2007Applicant: SOLEXANT CORPInventor: DAMODER REDDY