Abstract: An in-line production apparatus and a method for composition control of copper indium gallium diselenide (CIGS) solar cells fabricated by a co-evaporation deposition process. The deposition conditions are so that a deposited Cu-excessive overall composition is transformed into to a Cu-deficient overall composition, the final CIGS film. Substrates with a molybdenum layer move through the process chamber with constant speed. The transition from copper rich to copper deficient composition on a substrate is detected by using sensors which detect a physical parameter related to the transition. A preferred embodiment sensors are provided that detect the composition of elements in the deposited layer. A controller connected to the sensors adjusts the fluxes from the evaporant sources in order provide a CIGS layer with uniform composition and thickness over the width of the substrate.

Abstract: Thin-film solar cells of the CIGS-type use two integrally formed buffer layers, a first ALD Zn(O,S) buffer layer on top of the CIGS-layer and a second ALD ZnO-buffer layer on top of the first buffer layer. Both buffer layers are deposited in the same process step using ALD (atom layer deposition). The technology also relates to a method of producing the cell and a process line for manufacturing of the cell structure.

Abstract: An in-line production apparatus and a method for composition control of copper indium gallium diselenide (CIGS) solar cells fabricated by a co-evaporation deposition process. The deposition conditions are so that a deposited Cu-excessive overall composition is transformed into to a Cu-deficient overall composition, the final CIGS film. Substrates with a molybdenum layer move through the process chamber with constant speed. The transition from copper rich to copper deficient composition on a substrate is detected by using sensors which detect a physical parameter related to the transition. Preferred embodiment sensors are provided that detect the composition of elements in the deposited layer. A controller connected to the sensors adjusts the fluxes from the evaporant sources in order provide a CIGS layer with uniform composition and thickness over the width of the substrate.

Abstract: A method for manufacturing a thin film solar cell device including a CIGS based thin film solar cell module (17). Edge deletion by selective removal of a multilayer structure (13) that includes at least a front contact (15) and a CIGS layer (7) to expose the back contact (5) in at least a peripheral area (22) in the circumferential region (21) of the module (17) adjacent to a first longitudinal thin film solar cell segment (18) allows for contacting of the module (17) by attaching at least a first contacting element (27) to the back contact (5). Preferably a blasting operation using simultaneous supply of blasting agents and gathering of debris in a blasting chamber (32) arranged on the thin film solar cell module (17) is used for the selective removal.

Abstract: The present invention provides an electrical feed-through (200) for making a durable and reliable electrical connection through a wall (227) of a vacuum chamber (225). The electrical feed-through (200) comprises a tubular member having an open end (217) and a closed end (219). At least one conductor (201) extends through the closed end (217) and is fixed thereto by a vacuum sealing joint (214). The joint (214) is arranged so that it is not in line-of-sight from the open end (217). In this way impinging elements (220) and direct heat radiation (221) is prevented from directly reaching the joint (214), thereby extending the time it takes for contamination of the joint (214) to cause problems.

Abstract: A method for manufacturing a thin film solar cell module including at least a first and a second thin film solar cell, includes the steps of forming a first and a second back contact on a substrate. The active CIGS layer, or the absorber layer, and a window layer that extends over the first and the second back contacts is then deposited in a vacuum equipment. To form solar cells electrically isolated from each other, a first portion of the absorber layer and the window layer is separated from a second portion of the absorber layer the window layer. To connect the thin film solar cells in series, an electrical interconnection between the first portion of the window layer and the second back contact is formed by selectively transforming a third portion of the absorber layer to an electrically conductive compound.

Abstract: A method for manufacturing a thin film solar cell device including a CIGS based thin film solar cell module (17). Edge deletion by selective removal of a multilayer structure (13) that includes at least a front contact (15) and a CIGS layer (7) to expose the back contact (5) in at least a peripheral area (22) in the circumferential region (21) of the module (17) adjacent to a first longitudinal thin film solar cell segment (18) allows for contacting of the module (17) by attaching at least a first contacting element (27) to the back contact (5). Preferably a blasting operation using simultaneous supply of blasting agents and gathering of debris in a blasting chamber (32) arranged on the thin film solar cell module (17) is used for the selective removal.

Abstract: Thin-film solar cells of the CIGS-type use two integrally formed buffer layers, a first ALD Zn(O,S) buffer layer on top of the CIGS-layer and a second ALD ZnO-buffer layer on top of the first buffer layer. Both buffer layers are deposited in the same process step using ALD (atom layer deposition). The technology also relates to a method of producing the cell and a process line for manufacturing of the cell structure.