Abstract: An apparatus and continuous stable process for producing multicrystalline silicon ingots with large cross-sections by an induction method, by maintaining surface temperature of the ingot at the output of the crucible within the range of 900-1150° C., and by heating the ingot at the output of the upper zone of the controlled cooling compartment to a temperature of 1200-1250° C., followed by cooling of the ingot at a rate of no more than 10° C./cm.

Abstract: A process for the production of multicrystalline silicon ingots by the induction method comprises charging a silicon raw material into the melting chamber of a cooled crucible enveloped by an inductor, forming a melt surface, and melting, wherein the mass rate of charging the silicon raw material and the speed of pulling the ingot are set such that provide for the melt surface position below the upper plane of the inductor but not lower than ? of the height thereof and the melt surface is kept at the same level. In doing this the melt surface position is kept at the same level by maintaining one of the output parameters of the inductor feed within a predetermined range. The process provides for casting multicrystalline silicon ingots suitable for solar cell fabrication and it is notable for higher efficiency and lower specific energy consumption.

Abstract: An apparatus for producing multicrystalline silicon ingots by the induction method comprises an enclosure, which includes means for start-up heating of silicon and a cooled crucible enveloped by an inductor. The crucible has a movable bottom and four walls consisting of sections spaced apart by vertically extending slots, means for moving the movable bottom, and a controlled cooling compartment arranged under the cooled crucible. The inside face of the crucible defines a melting chamber of a rectangular or square cross-section. The walls of the cooled crucible extend outwards at least from the inductor toward the lowest portion of the cooled crucible to thereby expand the melting chamber, and the angle ? of expanding the melting chamber is defined by the equation ?=arctg[2·(k?1.

Abstract: An apparatus and continuous stable process for producing multicrystalline silicon ingots with large cross-sections by an induction method, by maintaining surface temperature of the ingot at the output of the crucible within the range of 900-1150° C., and by heating the ingot at the output of the upper zone of the controlled cooling compartment to a temperature of 1200-1250° C., followed by cooling of the ingot at a rate of no more than 10° C./cm.