Abstract: A deposition method and a system are provided to deposit a CdS buffer layer on a surface of a solar cell absorber layer of a flexible workpiece from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited from the deposition solution while the flexible workpiece is elastically shaped by a series of shaping rollers to retain the process solution on the solar cell absorber layer and while the flexible workpiece is heated by contacting to a heated liquid that the shaping rollers are fully or partially immersed. The flexible workpiece is elastically shaped by pulling a back surface of the flexible workpiece into surface cavity of the shaping rollers using magnetic force.

Abstract: A solar module having a curved surface to facilitate shedding of accumulated snow and water. The module can also be angled to achieve the same. The module includes a housing with a curved or angled upper surface and solar cells are positioned within the housing.

Abstract: A solar module having a curved surface to facilitate shedding of accumulated snow and water. The module can also be angled to achieve the same. The module includes a housing with a curved or angled upper surface and solar cells are positioned within the housing.

Abstract: An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

Abstract: The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first layer includes a first amount of copper, electrodepositing a second layer onto the first layer, the second layer including at least one of a second copper-indium-gallium-ternary alloy film, a copper-indium binary alloy film, a copper-gallium binary alloy film and a copper-selenium binary alloy film, wherein the second layer includes a second amount of copper, which is higher than the first amount of copper, and electrodepositing a third layer onto the second layer, the third layer including selenium; and reacting the precursor stack to form an absorber layer on the base.

Abstract: A system and method of manufacturing solar panels whereby parameters about how each cell, each array and each panel are recorded in a database or electronic memory. The cells, arrays and panels are also provided an identification, such as a bar code, to allow for subsequent retrieval of the parameters. The electronic memory is arranged so that different cells, arrays and panels that share the same parameters can be identified.

Abstract: Precursor layers and methods of forming Group IBIIIAVIA solar cell absorbers with bandgap grading using such precursor layers are described. The Group IBIIIAVIA absorber includes a top surface with a Ga/(Ga+In) molar ratio in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including Cu, In and Ga formed on a base, a layer of Se formed on the metallic film, and a second metallic layer substantially including Ga formed on the layer of Se.

Abstract: The present invention provides a method and precursor structure to form a Group IBIIIAIVA solar cell absorber layer. The method includes forming a Group IBIIIAVIA compound layer on a base by forming a precursor layer on the base through electrodepositing three different films, and then reacting the precursor layer with selenium to form the Group IBIIIAVIA compound layer on the base. The three films, described by the precursor layer, include in one embodiment a first alloy film comprising copper, indium and gallium, a second alloy film comprising copper and selenium formed on the first alloy film; and a selenium film formed on the second alloy film.

Abstract: The present invention provides methods for forming a doped Group IBIIIAVIA absorber layer for a solar cell. The method includes forming precursor layers that include a dopant rich layer and then annealing the precursor layers. The annealing process results in dopants diffusing through the layers to an exterior surface. The annealing process is periodically halted to remove dopants from the exposed surface.

Abstract: A plurality of solar cells is connected together in a shingled fashion. Each of the solar cells includes grid wires that are attached to an electrode of the solar cell so as to receive charge carriers produced when photons are absorbed by the solar cell. The grid wires are then interconnected with adjacent solar cells when the solar cells are shingled together. The grid wires may be applied to the solar cells via a laminate and the electrical interconnection of the grid wires may be achieved by the use of a conductive epoxy.

Abstract: A photovoltaic module comprises a first group of solar cells; a second group of solar cells; a first interconnection member extending across a first surface of the first group of solar cells and across a first surface of the second group of solar cells to connect the first and second groups of solar cells in parallel; and a second interconnection member extending across a second surface of the first group of solar cells and across a second surface of the second group of solar cells.

Abstract: A photovoltaic module comprises a first bypass diode and a first group of solar cells connected to the first bypass diode. The first group of solar cells comprises a first solar cell, a second solar cell connected in series to the first solar cell, and a third solar cell connected in parallel to the first solar cell.

Abstract: The present invention provides methods for forming a buffer layer for Group IBIIIAVIA solar cells. The buffer layer is formed using chemical bath deposition and the layer is formed in steps. A first buffer layer is formed on the absorber and the first buffer layer is then treated using etching, oxidizing, annealing or some combination thereof. Subsequently a second buffer layer is then positioned on the treated surface. Additional buffer layers can be added following treatment of the previously deposited layer.

Abstract: A method and a system are provided for forming planar absorber layers or structures by planarizing and reacting precursor layers in a reactor. A precursor structure is first formed over the front surface of a foil substrate and then planarized through application of pressure by a smooth surface while heated to a first temperature range to obtain a planar layer. The planar layer may be only partially reacted. The planar layer is further reacted at a second temperature range to form a fully or completely reacted planar absorber layer. The planar absorber layer may include at least one Group IB material, at least one Group IIIA material and at least one Group VIA material. The planar absorber layer may be a Group IBIIIAVIA compound layer.

Abstract: Processes and apparatus are described that form a solar cell absorber on a surface of a workpiece by reacting a precursor layer disposed on the surface of the workpiece with an absorber constituent vapor in a heating chamber. The absorber constituent material is delivered from an absorber constituent material delivery system in molten form into a container in the heating chamber and vaporized to be used during the reaction.

Abstract: Described is a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another example, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.

Abstract: The present inventions relate to methods and apparatus for detecting and mechanically removing defects and a surrounding portion of the photovoltaic layer and the substrate in a thin film solar cell such as a Group IBIIIAVIA compound thin film solar cell to improve its efficiency.

Abstract: The embodiments of the present invention provide a defect detection process and apparatus to detect defects in solar cell structures. During the process, an input signal from a signal source is applied to a top surface of a transparent conductive layer of a solar cell structure. In response to the input signal, an output signal is generated from a predetermined area of the top surface and detected by a defect detector. The output signal carrying the defect position information is transmitted to a computer and registered in a database. With the position information, an injector is driven to the defect location to apply an insulator to passivate the defect. A finger pattern layer may be formed over the predetermined area after completing the defect detection and passivation processes.

Abstract: An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

Abstract: Described are embodiments including an apparatus that provides a thin film solar cell base structure for a photovoltaic device, a method of manufacturing a photovoltaic device, a roll to roll method of manufacturing a thin film solar cell base structure, and a ruthenium alloy sheet material.