Abstract: The present invention provides a vertical-type thin film transistor (TFT). The vertical TFT may comprise a source electrode and a drain electrode extending parallel to each other, with a semiconductor layer arranged in between the source electrode and the drain electrode. A single gate electrode may be embedded in the semiconductor layer, the single gate electrode comprising micro-perforations configured to control the flow of electrons therethrough in dependence on a predetermined voltage difference between the source electrode and the single gate electrode. The gate electrode masks a direct electric field between the source electrode and the drain electrode. A rate of flow of electrons through the perforations is increased with an increase in the predetermined voltage.

Abstract: The present invention encompasses methods and systems of representing video in continuous time. Photons incident on pixels in an imaging array are continuously captured using a continuous time imaging sensor array to produce respective continuous time analog signals without any discontinuity in time. At each pixel, the respective continuous time analog signal is modulated into respective continuous time binary analog signals. The continuous time binary analog signals from all pixels are aggregated to produce a frame free video. Each pixel may comprise a continuous time sigma delta modulator and a photodiode having a capacitance. At each pixel, the respective continuous time analog signal is modulated using the continuous time sigma delta modulator to produce the corresponding continuous time binary analog signal. The capacitance of the photodiode functions as a charge integrator.

Abstract: The present invention encompasses methods and systems of representing video in continuous time. Photons incident on pixels in an imaging array are continuously captured using a continuous time imaging sensor array to produce respective continuous time analog signals without any discontinuity in time. At each pixel, the respective continuous time analog signal is modulated into respective continuous time binary analog signals. The continuous time binary analog signals from all pixels can then be aggregated to produce a frame free video. Further, at each pixel, the respective continuous time analog signal may be modulated using a continuous time sigma delta modulator to produce the corresponding continuous time binary analog signal. The sigma delta modulator may be one of charge-based or current-based.

Abstract: The present invention provides a vertical-type thin film transistor (TFT). The vertical TFT may comprise a source electrode and a drain electrode extending parallel to each other, with a semiconductor layer arranged in between the source electrode and the drain electrode. Two or more gate electrodes may be embedded in the semiconductor layer, the two or more gate electrodes being arranged parallel to one another. Each of the two or more gate electrodes may comprise a structure adapted to allow the flow of electrons therethrough. The structure of each of the gate electrodes may comprise one of a comb-like structure, a mesh structure, a perforated structure, a lattice structure, and the like. The structure may block a direct electric field between the source electrode and the drain electrode. The structure may allow the flow of electrons around and between elements of the structure.

Abstract: The present invention comprises a reconfigurable variable voltage battery. One or more variable voltage battery (VVB) modules are connected in series to form a stacked variable voltage battery (SVVB or Stacked VVB). A variable voltage battery module may comprise at least one battery cell and processor controlled switches adapted to vary the output of the variable voltage battery module. By separately configuring the switches of each VVB module, the output of the stacked VVB module can produce any voltage up to the full sum of the voltages of all the cells in the individual VVB modules. In addition, charge balancing can easily be achieved with a stacked VVB configuration, as some VVB modules can be bypassed (e.g., by setting select switches to simulate a short condition) either to prioritize the discharging of stronger VVB modules, or to prioritize the charging of weaker VVB modules.