Abstract: A write clock generator of a digital time base corrector for removing time base errors from color video signals includes a voltage controlled oscillator (VCO) in a phase lock loop by which the oscillator output or write clock pulses, after being suitably divided, are compared, as to phase, with the horizontal synchronizing signals and the burst signals separated from the video signals for controlling the VCO on the basis of both comparisons.

Abstract: A recording and/or reproducing apparatus having a plurality of modes of operation, for example, at least recording and reproducing modes of operation, includes a main operating mode selecting device of the non-locked push-button type having push-button actuated switches which are selectively closed momentarily for applying a respective trigger signal to a self-holding operation controlling circuit which thereby assumes a condition corresponding to the selected mode of operation and maintains such condition until another trigger signal is received from the main operating mode selecting device, an auxiliary trigger signal generating circuit operative upon the supplying of electric power therethrough, for example, through a timer-controlled switch, to produce an auxiliary trigger signal, an auxiliary operating mode selecting device, for example, in the form of a manually actuable change-over switch, which is selectively disposable in an inoperative position and in one or more operative positions, for example, co

Abstract: A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.

Abstract: A method is disclosed for making a light emitting diode having positive and negative electrodes which includes forming a first conductive metal layer on a substrate of insulating material, a second conductive layer of a metal different from the first is then formed on the exposed surface of the first layer. The two layers are then etched to form aligned narrow openings and thereafter the first layer is overetched in its opening with the second opening being used as a mask to form a relatively large opening aligned with the narrow opening of the second layer. This leaves the first opening with a pair of eaves overhanging the relatively large opening of the first opening. The dimensions of the large opening are wider than the spacing between the positive and negative electrodes of the light emitting diode.

Abstract: A noise elimination circuit utilizing a novel four-terminal semiconductor device having an emitter-grounded current amplification factor which rises steeply from a low point to a constant level portion. The input signal which contains desirable signal portions and undesirable noise portions are applied to both the base and the gate of the four-terminal device. The four-terminal device is biased at its gate in such a manner that the desirable signal portions are positioned in the vicinity of the constant level segments of the emitter-grounded current amplification factor, and the high level portions or undesirable portions of the signal are positioned in such a manner to be at the low point on the emitter-grounded current amplification characteristic whereby the desired signal is left unchanged and the undesirable signal is greatly reduced in amplitude at the output of the system.

Abstract: In a solid state image sensor of the type which employs an inter-line transfer charge-coupled imaging device, the electrodes of the vertical shift registers are enlarged to extend to places which lie between image pick-up portions aligned in the vertical direction of the device. Each of the image pick-up portions comprises an image sensing area and a transfer gate. Preferably, every other image pick-up portion of a conventional CCD imaging device is removed to provide spacing between the image pick-up portions relative to the vertical direction.

Abstract: A Metal Insulator Semiconductor (MIS) field effect device has an oxygen-doped polycrystalline silicon layer on the field portion in order to prevent an unwanted parasitic inversion layer. The oxygen-doped polycrystalline silicon layer contains oxygen in the range of 2 to 40 atomic percent.

Abstract: In an apparatus for processing reproduced color video signals composed of a frequency-modulated luminance component and a frequency-converted chrominance component having its carrier frequency substantially below a standard frequency therefor; there are provided a drop-out compensating circuit responsive to a drop-out in the luminance component for inserting, in the interval of such drop-out, an earlier occurring portion of the luminance component, a frequency-converter receiving the chrominance component and a frequency-reconverting signal for restoring the carrier frequency to the standard frequency therefor, an automatic frequency control circuit (AFC) responsive to horizontal synchronizing signals separated from the luminance component after the drop-out compensation thereof so as to regulate the frequency-reconverting signal in the sense for removing time base errors from the reproduced color video signals, and a circuit which is responsive to a drop-out in the luminance component for maintaining the fre

Abstract: In apparatus for reproducing color video signals recorded in successive parallel tracks on a record medium with the chrominance components of video signals recorded in next adjacent tracks having first and second carriers which differ from each other in respect to their phases or polarity characteristics; and in which a plurality of transducers scan along the tracks one at a time so as to reproduce the video signals recorded in each of said tracks along with cross-talk signals from the tracks next adjacent thereto, means for separating said chrominance signal components from the luminance signal component in the reproduced signals, and a signal processing circuit including a switching circuit and a comb filter provides the separated chrominance components of video signals reproduced from each of said tracks with a common carrier and eliminates therefrom the chrominance components of the cross-talk signals on the basis of said different phases of the first and second carriers with which the chrominance compone

Abstract: A load protective circuit having a class B amplifying stage driven by a class A amplifier and a load DC coupled to the class B stage, in which means are provided for detecting an undesirable DC voltage at the output of the class B amplifying stage and for producing a control signal in response to the output of the detecting means. A first protective means shunts the input signal to the class B amplifier to ground in response to the control signal. A second protective means controls a switching means connected between the output point and ground so as to connect the output point of the class B amplifier to ground in response to the control signal to thereby remove any undesirable DC voltage from the output point of the amplifier and to protect the DC coupled load from being damaged.

Abstract: A sensing circuit for detecting a change in a normal characteristic of an object such as a change in a normal temperature characteristic, a change in a normal magnetic field characteristic, or a change in a normal light falling on the sensing element of the sensing circuit is provided. The circuit employs a four-terminal semiconductor device having alternate layers of conductivity type, which has an amplification characteristic of the collector current to the base-emitter grounded, wherein there is a sharp decrease in the h.sub.FE amplification characteristic at one value of gate to emitter voltage. This point represents the point in which the semiconductor device is biased for a normally desired characteristic being sensed. Whenever there is a deviation from this normal position, there is a sharp rise in the h.sub.FE irrespective of what the direction of deviation is. The h.sub.FE gain then substantially levels off.

Abstract: A microphone assembly or apparatus comprises a perforated capsule having a microphone unit supported therein and a tubular projection communicating with the interior of the capsule. The projection is arranged to be inserted into the auditory canal of a human or dummy head. The microphone unit is located near the opening of the auditory canal.

Abstract: An apparatus for recording and/or reproducing video signal information employs, as a record medium, a sheet assembly composed of at least two normally closely adjacent, confronting flexibly resilient sheets which provide mutual protection, when in that relation, for video signal information recorded, for example, magnetically, on at least one of the sheets.

Abstract: A switching circuit using first and second semiconductor devices each having a semiconductive substrate with a current path portion, first and second semiconductive regions forming a PN junction therebetween, the first region being capacitively coupled to the current path portion, a control electrode connected to the second region, a signal input terminal electrically connected to the first terminal of the first semiconductor device, an output terminal electrically connected to the second terminal of the first semiconductor device, means for connecting the control electrode of the first semiconductor device to the first terminal of the second semiconductor device, means for applying a bias voltage to the second terminal of the second semiconductor device, and switch means for selectively applying a bias voltage to the control electrode of said second semiconductor device. The switching circuit is operated with a signal applied to the control electrode of the second semiconductor device.

Abstract: A time lapse video tape recorder has rotary magnetic transducers connected to receive video signals during selected, spaced intervals and record them on a magnetic medium. In succeeding intervals switching means connects the transducers to a playback and alarm system to produce a warning if the signal as reproduced is defective in a predetermined manner, thereby indicating possible malfunctioning of the recording apparatus.

Abstract: An insulated gate field effect transistor having a narrow channel made by double diffusion. The double-diffused MIS transistor has a buried layer of high impurity concentration beneath the channel region except the portions of the drain contact region or drain electrode. The buried layer of high impurity concentration is of the same impurity as that of the channel region and is so located that the channel-spreading resistance is drastically reduced while the capacitance between the drain and the channel is maintained as small as possible.

Abstract: A plurality of transducers are rotated or otherwise moved in respect to a record medium so as to be successively operatively positioned relative to the latter in a repeating cyclic order for recording and/or reproducing video signals in successive parallel tracks on the record medium. Interference or cross-talk between signals recorded in adjacent tracks is reduced or eliminated during reproduction by recording the chrominance signal components of the video signals with different first and second carriers in the adjacent tracks, respectively. Pulse signals are produced upon the operative positioning of each of the transducers, and the first and second carriers are selected for recording of the chrominance signal components in the tracks which are next adjacent each other in response to every other one of the pulse signals.

Abstract: A semiconductor device having a high current amplification gain which includes a low impurity concentration in the emitter region of the device, an injected minority carrier diffusion length L greater than the width of the emitter, and a high impurity concentration region of the same type as the emitter overlying at least a portion of said emitter region which provides a built-in-field where there is a drift current of minority carriers back toward the base region. The built-in field is larger than kT(qL) so that the drift current adjacent the built-in-field substantially cancels the minority carrier diffusion current injected from the base region.

Abstract: An F-M demodulator circuit including a multivibrator and a differential amplifier that have common output electrodes and a capacitor thereacross demodulates a frequency modulated signal differentially applied to input electrodes of the amplifier. The state of conductivity of the multivibrator reverses at a fixed time after reversal of the state of conductivity of the differential amplifier. The capacitor is charged to opposite polarities alternately, according to the relative states of conductivity of the multivibrator and differentially amplifier, by constant current pulses of equal duration. A pulse signal based on the rate of occurrence of the charging pulses has a duty cycle linearly related to the frequency of the modulating signal, and filtering this pulse signal extracts the modulating signal.

Abstract: Successive field intervals of a composite color television signal are respectively recorded on successive recording tracks which extend parallel to one another on a record medium such as a magnetic tape. During the reproduction of a color television signal in a conventional VTR (video tape recorder), successive field intervals of the color television signal are alternately reproduced from the successive record tracks by means of two signal reproducing heads which are switched alternately.