Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.
Type:
Grant
Filed:
December 12, 2018
Date of Patent:
July 21, 2020
Assignee:
Soraa Lase Diode, Inc.
Inventors:
James W. Raring, Melvin McLaurin, Paul Rudy, Po Shan Hsu, Alexander Sztein