Abstract: Low strain heteroepitaxy of (111) silicon on (111) lithium aluminum between the reconstructed 7.times.7 surface of (111) silicon and a 6.times.6 array of aluminum atoms on the surface of the (111) lithium aluminum. The 7.times.7 reconstructed (111) silicon surface contains 36 silicon atoms and 13 vacancies for every 49 surface sites. The 36 silicon atoms on an area averaged basis match the 36 aluminum atoms in the 6.times.6 aluminum diamond structure (zero vacancies) present at the (111) surface of lithium aluminum to within about 1%.
Abstract: Relates to a composition of matter comprising a conductive sodium thallium type crystalline alloy substrate of LiZn, LiAl, LiGa, LiIn, NaTl or LiCd having crystalline silicon integrally overgrown thereon in an oriented crystal layer. Solar cells and semi-conductors can be formed from the product.
Abstract: Relates to a method for producing a product comprising crystalline silicon on a sodium thallium type substrate by application of silicon atoms gradually to that substrate whereby oriented overgrowth occurs and also to the product produced by said method. The product is useful in semiconductor and solar cell applications.
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