Patents Assigned to South Epitaxy Corporation
  • Patent number: 7482696
    Abstract: A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.
    Type: Grant
    Filed: April 16, 2004
    Date of Patent: January 27, 2009
    Assignee: South Epitaxy Corporation
    Inventors: Shih-Chang Shei, Jinn-Kong Sheu
  • Patent number: 7358173
    Abstract: A bumping process for a light emitting diode (LED) chip is provided. Firstly, a LED chip with a plurality of electrodes is provided, then a pattern plate having a plurality of openings is disposed on the LED chip, and the electrodes are correspondingly exposed by the openings. Then, a plurality of posts can be formed over the exposed electrodes by printing. After the printing process, the pattern plate is lifted and a reflow process is performed to the posts. The posts are formed by a printing process, the bumping process is less time-consuming and with lower costs and the height and the composition of the bumps con be precisely controlled, thus improving the reliability of LED die package structures.
    Type: Grant
    Filed: September 7, 2004
    Date of Patent: April 15, 2008
    Assignee: South Epitaxy Corporation
    Inventors: Shih-Chang Shei, Jinn-Kong Sheu
  • Patent number: 7253013
    Abstract: A method for manufacturing a light-emitting diode (LED) is described. The method comprises: providing a temporary substrate; forming an illuminant epitaxial structure on the temporary substrate; forming a first transparent conductive layer on the illuminant epitaxial structure; forming a metal substrate on the first transparent conductive layer; forming an adhesion layer on the metal substrate; providing a supporting substrate, wherein the supporting substrate is connected to the metal substrate by the adhesion layer; removing the temporary substrate, so as to expose a surface of the illuminant epitaxial structure; forming a second transparent conductive layer on the exposed surface of the illuminant epitaxial structure; and forming an electrode on a portion of the second transparent conductive layer.
    Type: Grant
    Filed: October 6, 2004
    Date of Patent: August 7, 2007
    Assignee: South Epitaxy Corporation
    Inventors: Shih-Chang Shei, Yen-Wei Chen, Wei-Shou Chen, Chia-Sheng Chang, Hsin-Ming Lo, Chien-Fu Shen
  • Patent number: 7205648
    Abstract: A flip-chip LED package structure is disclosed. The flip-chip LED package structure includes a submount, patterned conductive films, a LED chip and two bumps. Several grooves are formed on the sidewalls of the submount. The patterned conductive films are formed on the grooves. The patterned conductive films extend from the grooves to parts of a top surface and a backside surface of the submount. The bumps are formed on two electrodes of the LED chip. The LED chip is disposed on the submount and connects electrically with the patterned conductive films via the bumps. The flip-chip LED package structure is disposed on a circuit board and connects electrically with the circuit without the wire bonding.
    Type: Grant
    Filed: April 16, 2004
    Date of Patent: April 17, 2007
    Assignee: South Epitaxy Corporation
    Inventors: Shih-Chang Shei, Jinn-Kong Sheu
  • Patent number: 7169326
    Abstract: A fluorescent material of terbium aluminum garnet has a formula (Tb3-x-yCexRey) (Al5-zO12Mez), wherein 0<x?0.8, 0<y?2.0, 0<z?1.0, wherein Re is at least one of gadolinium (Gd), rubidium (Rb), thulium (Tm), praseodymium (Pr), samarium (Sm), europium (Eu), dysprosium (Dy), holmium (Ho), erbium (Er), ytterbium (Yb), lutetium (Lu), strontium (Sr), yttrium (Y), vanadium (V), and chromium (Cr), and wherein Me is silicone that is added or substituted. A blue light-emitting diode may be used as an exciting light source for exciting the fluorescent material to generate an excited light. The excited light and the exciting light are mixed to generate a pure white light. The fluorescent material may be produced by a solid reaction method, a combustion method, or a synchronous precipitation method.
    Type: Grant
    Filed: January 22, 2004
    Date of Patent: January 30, 2007
    Assignee: South Epitaxy Corporation
    Inventors: Jui-Kung Wu, Tai-Yu Chen, Chao-Lung Huang, Chao-Yuan Cheng
  • Patent number: 7151281
    Abstract: A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer is disposed over the substrate, and is divided into at least a first island structure and a second island structure. The first electrode and the second electrode are connected between the first island structure and the second island structure. A shunt diode is formed by the first electrode, the second electrode and the second island structure. The shunt diode is connected in parallel to the LED with an inverse voltage compared to the LED. In the LED structure of the invention, the first island structure and the second island structure are manufactured simultaneously by the epitaxy procedure. Therefore, the LED could be protected from damage due to electrostatic discharge (ESD).
    Type: Grant
    Filed: September 24, 2004
    Date of Patent: December 19, 2006
    Assignee: South Epitaxy Corporation
    Inventors: Shih-Chang Shei, Jinn-Kong Sheu
  • Patent number: 6914268
    Abstract: A light emitting diode (LED) device is provided. The LED device includes a device substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a second conductivity type, a transparent conductive oxide layer, a reflecting layer and two electrodes. The first doped layer is deposited on the device substrate, the light emitting layer is deposited on a portion of the first doped layer, and the second doped layer is deposited on the light emitting layer. The first and the second doped layers are comprised of III-V semiconductor material respectively. The transparent conductive oxide layer is deposited on the second doped layer, and the reflecting layer is deposited on the transparent conductive oxide layer. The two electrodes are deposited on the reflecting layer and the first doped layer respectively.
    Type: Grant
    Filed: February 16, 2004
    Date of Patent: July 5, 2005
    Assignee: South Epitaxy Corporation
    Inventors: Shih-Chang Shei, Jinn-Kong Sheu
  • Patent number: 6712478
    Abstract: A light emitting diode with strained layer superlatices (SLS) crystal structure is formed on a substrate. A nucleation layer and a buffer layer are sequentially formed on the substrate, so as to ease the crystal growth for the subsequent crystal growing process. An active layer is covered between an upper and a lower cladding layers. The active later include III-N group compound semiconductive material. A SLS contact layer is located on the upper cladding layer. A transparent electrode is located on the contact later to serve as an anode. Another electrode layer has contact with the buffer layer, and is separated from the lower and upper cladding layers.
    Type: Grant
    Filed: January 16, 2003
    Date of Patent: March 30, 2004
    Assignee: South Epitaxy Corporation
    Inventors: Jinn-Kong Sheu, Daniel Kuo, Samuel Hsu
  • Patent number: 6686610
    Abstract: A light emitting diode structure is formed on a substrate. A nucleation layer at low temperature is formed on the substrate. A buffer layer is formed on the nucleation layer for easing the subsequent formation of crystal growth. N active layer is disposed between an upper confinement layer and a lower confinement layer. The active layer include the semiconductor material doped with III-N elements. A contact layer is disposed on the upper confinement layer. A reversed tunneling layer is form on the contact layer, wherein the conductive types for both are different. A transparent layer is formed on the reversed tunneling layer. A cathode electrode contacts with the conductive buffer layer and is separated from the active layer and the transparent electrode.
    Type: Grant
    Filed: March 15, 2002
    Date of Patent: February 3, 2004
    Assignee: South Epitaxy Corporation
    Inventor: Jinn-Kong Sheu
  • Patent number: 6593597
    Abstract: A group III-V element-based flip-chip assembled light-emitting diode structure with electrostatic protection capacity. A first conductive buffer layer and a second conductive buffer layer are formed over a transparent substrate. An active layer structure, a contact layer, an electrode is formed over the first conductive buffer layer. The active layer structure, the contact layer and the electrode together form a light-emitting diode structure. A metallic electrode is formed over the second conductive buffer layer to form a Schottky diode. Alternatively, a doped region is formed within the second conductive buffer layer to form a homo-junction diode structure. The anode and cathode of the diode above the second conductive buffer layer are electrically connected to the cathode and anode of the light-emitting diode, respectively.
    Type: Grant
    Filed: March 5, 2002
    Date of Patent: July 15, 2003
    Assignee: South Epitaxy Corporation
    Inventor: Jinn-Kong Sheu
  • Patent number: 6559482
    Abstract: A III-N compound semiconductor bipolar transistor structure and method of manufacture. An epitaxial layer structure is formed over a substrate. The epitaxial layer structure includes a nucleation layer, a buffer layer, an emitter layer containing first type dopants (conductive type) and a base layer containing second type dopants (conductive type). Ion implantation is conducted to form a first conductive region within the base layer for forming a collector terminal. A portion of the emitter layer is etched for forming an emitter terminal. In addition, two ion-implantation regions may form inside the base layer. The ion-implantation regions serve separately as the collector terminal and the emitter terminal of the bipolar transistor, respectively, so that a more planar transistor structure is formed.
    Type: Grant
    Filed: April 3, 2002
    Date of Patent: May 6, 2003
    Assignee: South Epitaxy Corporation
    Inventor: Jinn-Kong Sheu
  • Patent number: 6515306
    Abstract: A light emitting diode with strained layer superlatices (SLS) crystal structure is formed on a substrate. A nucleation layer and a buffer layer are sequentially formed on the substrate, so as to ease the crystal growth for the subsequent crystal growing process. An active layer is covered between an upper and a lower cladding layers. The active later include III-N group compound semiconductive material. A SLS contact layer is located on the upper cladding layer. A transparent electrode is located on the contact later to serve as an anode. Another electrode layer has contact with the buffer layer, and is separated from the lower and upper cladding layers.
    Type: Grant
    Filed: August 27, 2001
    Date of Patent: February 4, 2003
    Assignee: South Epitaxy Corporation
    Inventors: Daniel Kuo, Samuel Hsu