Abstract: The present disclosure adjusts the voltage threshold values of select gates of NAND strings. The select gates of the NAND string can be read, erased, and programmed.
Type:
Application
Filed:
January 10, 2008
Publication date:
July 16, 2009
Applicant:
SPAINSION LLC
Inventors:
Michael A. VanBuskirk, Colin S. Bill, Takao Akaogi