Abstract: Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.

Abstract: A semiconductor device and a control method thereof that include a memory cell array having a plurality of nonvolatile memory cells and a control circuit. The control circuit starts a first operation of the memory cells in a part of the region of the memory cell array when a first command is input, then decides whether to temporarily suspend the first operation or to reset the first operation when a second command is input, and temporarily suspends the first operation if the control circuit decides to temporarily suspend the first operation, and terminates the first operation if the control circuit decides to reset the first operation.