Patents Assigned to Spansion LLC Advanced Micro Devices, Inc
  • Patent number: 7102156
    Abstract: A memory element includes a first electrode, a passive layer on and in contact with the first electrode, a polyfluorene active layer on and in contact with the active layer, and a second electrode on and in contact with the polyfluorene active layer. The chemical structure of the polyfluorene active layer may be altered to take different forms, each providing a different memory element operating characteristic.
    Type: Grant
    Filed: December 23, 2004
    Date of Patent: September 5, 2006
    Assignee: Spansion LLC Advanced Micro Devices, Inc
    Inventors: Richard Kingsborough, Igor Sokolik, David Gaun, Swaroop Kaza, Suzette Pangrle, Alexander Nickel, Stuart Spitzer