Abstract: The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit connected to a core cell provided in a nonvolatile memory cell array, a second current-voltage conversion circuit connected to a reference cell through a reference cell data line, a sense amplifier sensing an output from the first current-voltage conversion circuit and an output from the second current-voltage conversion circuit, a compare circuit comparing a voltage level at the reference cell data line with a predefined voltage level, and a charging circuit charging the reference cell data line, if the voltage level at the reference cell data line is lower than the predefined voltage level during pre-charging the reference cell data line. According to the present invention, the pre-charging period of the reference cell data line can be shortened, and the data read time can be shortened.

Abstract: An approach to use silicided bit line contacts that do not short to the underlying substrate in memory devices. The approach provides for silicide formation in the bit line contact area, using a process that benefits from being self-aligned to the oxide-nitride-oxide (ONO) nitride edges. A farther benefit of the approach is that the bit line contact implant and rapid temperature anneal process can be eliminated. This approach is applicable to embedded flash, integrating high density devices and advanced logic processes.

Abstract: Embodiments described herein generally relate to methods of manufacturing n-type lightly doped drains and p-type lightly doped drains. In one method, a photoresist mask is used to etch a transistor, and the mask is left in place (i.e., reused) to protect other devices and poly while a high energy implantation is performed in alignment with the photoresist mask, such that the implantation is adjacent to the etched transistor. One example of a high energy implantation is forming lightly doped source and drain regions. This technique of reusing a photoresist mask can be employed for creating lightly doped source and drain regions of one conductivity followed by using the technique a second time to create lightly doped source and drain regions of the complementary conductivity type. This may prevent use of at least one hard mask during manufacturing.

Abstract: A method and manufacture for charge storage layer separation is provided. A layer, such as a polymer layer, is deposited on top of an ONO layer so that the polymer layer is planarized, or approximately planarized. The ONO includes at least a first region and a second region, where the first region is higher than the second region. For example, the first region may be the portion of the ONO that is over the source/drain region, and the second region may be the portion of the ONO that is over the shallow trench. Etching is performed on the polymer layer to expose the first region of the ONO layer, leaving the second region of the ONO unexposed. The etching continues to occur to etch the exposed ONO at the first region so that the ONO layer is etched away in the first region and the second region remains unexposed.

Abstract: Wire bonds are formed at an integrated circuit device so that multiple wires are bonded to a single bond pad. In a particular embodiment, the multiple wires are bonded by first applying a stud bump to the pad and successively bonding each of the wires to the stud bump. Another stud bump can be placed over the bonded wires to provide additional connection security.

Abstract: The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50° C. or less, with the deposition taking place at a power level of 300 W or less.

Abstract: In a method of promoting adhesion between a copper body and a dielectric layer in contact therewith, the copper body and dielectric layer are placed in a vacuum chamber, in a chamber, the copper body and dielectric layer within the chamber are heated, and SiH4 is provided in the chamber.

Abstract: An embodiment of the present memory cell a first layer of a chosen conductivity type, and a second layer which includes ferroelectric semiconductor material of the opposite conductivity type, the layers forming a pn junction. The first layer may be a conjugated semiconductor polymer, or may also be of ferroelectric semiconductor material. The layers are provided between first and electrodes. In another embodiment, a single layer of a composite of conjugated semiconductor polymer and ferroelectric semiconductor material is provided between first and second electrodes. The various embodiments may be part of a memory array.

Abstract: A DC-DC converter or the like capable of generating a stable output voltage is provided. A control circuit 11 of a current mode step-down DC-DC converter 1 includes a slope compensation circuit SC and an offset circuit IF1. The slope compensation circuit SC adds an increase gradient m2 due to slope compensation to an increase gradient of a coil current waveform Vsense in a range wherein an ON period Ton of a switch SW1 exceeds ½ of an operating cycle T. An offset circuit IF1 applies an offset voltage Voffset which becomes smaller depending on the ON period Ton in excess of ½ of an operating cycle T, to a coil current waveform Vsense.

Abstract: A method for manufacturing a memory system is provided including forming a charge-storage layer on a first insulator layer including insulating the charge-storage layer from a vertical fin, forming a second insulator layer from the charge-storage layer, and forming a gate over the second insulator includes forming a fin field effect transistor.

Abstract: A reference voltage circuit includes a first amplifier configured to output a reference voltage, a second amplifier coupled to the first amplifier, an offset adjustment voltage generation circuit, a first load device and a first pn junction device, and second and third load devices and a second pn junction device. The offset adjustment voltage generation circuit is configured to generate a voltage which is input to the third and fourth input terminals of the second amplifier, and reduce an offset voltage between the first and second input terminals of the first amplifier through the second amplifier. The first input terminal is coupled to a coupling node of the first load device and the first pn junction device, and the second input terminal is coupled to a coupling node of the second load device and the third load device.

Abstract: An embodiment of the invention provides a semiconductor device that includes: a memory cell array that includes non-volatile memory cells; a first selecting circuit that connects or disconnects a source and a drain of a transistor that forms one of the memory cells, to or from a data line DATAB connected to a first power supply; and a second selecting circuit that connects or disconnects the source and drain to or from a ground line ARVSS connected to a second power supply. In this semiconductor device, the first selecting circuit and the second selecting circuit are arranged on the opposite sides of the memory cell array. One embodiment of the invention also provides a method of controlling the semiconductor device.

Abstract: Methods for fabricating an electronic device and electronic devices therefrom are provided. A method includes forming one or more masking layers on a semiconducting surface of a substrate and forming a plurality of dielectric isolation features and a plurality of fin-type projections using the masking layer. The method also includes processing the masking layers and the plurality of fin-type projections to provide an inverted T-shaped cross-section for the plurality of fin-type projections that includes a distal extension portion and a proximal base portion. The method further includes forming a plurality of bottom gate layers on the distal extension portion and forming a plurality of control gate layers on the plurality of dielectric isolation features and the plurality of bottom gate layers.

Abstract: A system and methodology that can prevent errors during data commit on multicycle pass complete associated with a memory is provided. The system employs a transaction buffer component in the memory that receives and temporarily stores information associated with a transaction. A controller component programs subsets of data to respective memory locations once the entire transaction is completed based on the information stored in the transaction buffer component. Thus, if the transaction is interrupted during the transfer of the user data into the buffer, the data stored in the memory is not affected and can still contain the original data when power is regained. If the data transfer between the transaction buffer component and memory array is interrupted, the controller component can complete the transfer from the point of interruption on regaining power and can avoid partial storage of data.

Abstract: An integrated circuit includes a bus; a processing unit configured to execute a user program; and a debugging circuit connected to the bus, the debugging circuit transferring a command in a command register to the processing unit via the bus in response to a command transfer request from the processing unit, wherein, when the processing unit halts the execution of the user program and makes a request for the command transfer request to the debugging circuit, the debugging circuit makes a response for freeing the use right of the bus from the processing unit in a period between the command transfer request and the command transfer operation.

Abstract: Methods and apparatus for manufacturing semiconductor devices, and such semiconductor devices, are described. According to various aspects of the disclosure, a semiconductor device can be manufactured by forming a core region of the semiconductor device and forming a periphery region of the semiconductor device. A first polysilicon region can then be formed over the core and periphery regions of the semiconductor device. A first mask is formed on the first poly silicon layer and a second polysilicon layer is disposed such that the second polysilicon layer covers the first mask. A second mask can then be formed on the second polysilicon layer. After forming the second mask, portions of the first and second polysilicon layers that are uncovered by either the first or second masks are removed.

Abstract: Systems, methods, and computer program products for programmable reference cell selection for flash memory are disclosed. An exemplary system includes an array of interconnected cells and a flexible decoder. The array is configured to receive a selection signal as input, select a cell based upon the selection signal, and provide an output based on the selected cell. The flexible decoder is configured to receive an input, generate a selection signal based on the input and one or more characteristics of the array of interconnected cells, and provide the selection signal to the array of interconnected cells.

Abstract: A multi-chip package is disclosed that has a construction capable of preventing and/or reducing electrical shorts caused by shifts in bond wires. The multi-chip package includes a die attach formed between connection points of a bond wire. The die attach is made of a non-conductive material and can be constructed so as to support or encompass a portion of the bond wire. By contacting the bond wire, the die attach restricts the motion of the bond wire by acting as a physical barrier to the bond wire's movement and/or as a source of friction. In this manner, undesired position shifts of the bond wires can be prevented, reducing device failures and allowing for improved manufacturing allowances.

Abstract: A semiconductor device is provided. The semiconductor device includes a microelectronic layer, a first mask layer formed on the microelectronic layer having first features separated by first openings, and a second mask layer formed on the first mask layer having second features that are separated by second openings. Each second feature is centrally located on a respective one of the first features. A length each second feature in a dimension is substantially equal to a length of a respective one of the first openings in the dimension.

Abstract: Embodiments of the present invention include an apparatus, method, and system for speech recognition of a voice command. The method can include receiving data representing a voice command, generating a list of targets based on the state information of each target within the system, and selecting a target from the list of targets, based on the voice command.