Abstract: The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.

Abstract: The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner.

Abstract: A process for preparing a halogenated polysilane HpSin?pX(2n+2)?p with n=1 to 50; 0?p?2n+1, and X=F, Cl, Br, I, as an individual compound or a mixture of compounds, from a mixture which includes the halogenated polysilane or in which the halogenated polysilane is formed, additionally includes boron-containing impurities, wherein a) the mixture is admixed with at least 1 ppbw (parts per billion per weight) of a siloxane-forming oxidizing agent or siloxane, the boron-containing impurities forming compounds having a volatility and/or solubility different from the halogenated polysilanes, b) the halogenated polysilane is separated from the compound(s), and c) not more than 1 ppmw of water and not less than 1 ppb of siloxanes are present.

Abstract: Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C—SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C—SiC and amorphous SiC or halogen-containing nanocrystalline 3C—SiC and amorphous carbon.

Abstract: A storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si—Si bonds, the substituenis of which predominantly consist of hydrogen and in the composition of which the atomic ratio of sabstitueot to silicon is at least 1:1.

Abstract: The invention relates to a method for producing fluorinated polysilanes. Hydrogen fluoride and/or hexafluorosilicic acid, which are obtained in particular during acid digestion of mineral phosphates in the production of phosphate fertilisers, are used for the production of SiF4. The SiF4 obtained is thermally or plasma-chemically converted to fluorinated polysilane. The method is particularly efficient and cost-effective.

Abstract: A method of producing urea includes reacting SiO2/Al2O3 or SiO2/Al2O3-containing material, with addition of a carbon source, with gaseous nitrogen at elevated temperature to produce silicon nitride (Si3N4)/aluminum nitride (AlN) or silicon nitride/aluminum nitride-containing material; reacting the silicon nitride/aluminum nitride or silicon nitride/aluminum nitride-containing material in the presence of a basic alkali metal compound and/or alkaline-earth metal compound, with water at elevated temperature, to produce ammonia and alkali metal silicates/aluminates and/or alkaline earth metal silicates/aluminates; and reacting the ammonia with carbon dioxide to produce the urea.

Abstract: Process for supplying a fuel cell with hydrogen, which includes the steps:—intermediate storage of (poly)silanes or (poly)silane solutions—transfer of the (poly)silanes to a reaction chamber—reaction or hydrolysis of the silanes or silane solutions in the reaction chamber with an aqueous solution to liberate H2,—removal of the solid and/or liquid reaction products from the reaction chamber,—transfer of the H2 formed to the fuel cell. The invention also relates to a hydrogen generator for fuel cells based on silanes.

Abstract: The invention relates to a process for preparing hydrogen. According to the invention, monosilane or polysilane is converted to hydrogen at an elevated temperature with steam or oxygen.

Abstract: A process for hydrogenating halogenated silanes or halogenated germanes. The process comprises hydrogenating a Lewis acid-base pair with addition of H2, hydrogenating halogenated silanes or halogenated germanes with an H?-containing Lewis acid-base pair, and regenerating the Lewis acid-base pair and releasing hydrogen halide.

Abstract: A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane.

Abstract: A chlorinated polysilane has the formula SiClx wherein x=0.01?0.8 and which can be produced by thermolysis of a chloropolysilane at a temperature below 600° C.

Abstract: A method and a device produce short-chain halogenated polysilanes and/or short-chain halogenated polysilanes and halide-containing silicon by thermolytic decomposition of long-chain halogenated polysilanes. The thermolytic decomposition of long-chain halogenated polysilanes diluted with low-molecular halosilanes is carried out under an atmosphere of halosilanes, thereby ensuring the production of such products at industrial scale in a simple and cost-effective manner.

Abstract: The present invention relates to a method for the production of silicon from silyl halides. In a first step, the silyl halide is converted, with the generation of a plasma discharge, to a halogenated polysilane, which is subsequently decomposed to silicon, in a second step, with heating.

Abstract: The invention is directed to mixtures of polysilanes macroscopically solid at ambient temperature wherein the individual components of the composition SinH2n and/or SinH2n+2 of which decompose before they are boiling at an applied process pressure and which are produced from the hydrogenation of plasmachemically generated largely chlorinated polysilane mixtures. These mixtures of polysilanes are especially suited to be applied onto surfaces as solutions or dispersions and to obtain silicon-based structures or layers in subsequent process steps. Furthermore, they are especially safe in handling and can be additionally made up into transport forms in suitable transport containers.

Abstract: The present invention relates to a method for the production of silicon from silyl halides. In a first step, the silyl halide is converted, with the generation of a plasma discharge, to a halogenated polysilane, which is subsequently decomposed to silicon, in a second step, with heating.

Abstract: A method for producing ammonia includes reacting SiO2 and/or Al2O3, or material containing SiO2 and/or Al2O3, with addition of a carbon source, with gaseous nitrogen at elevated temperature to give silicon nitride (Si3N4) and/or aluminum nitride (AlN), or material containing silicon nitride and/or aluminum nitride, and reacting resultant silicon nitride and/or aluminum nitride, or material containing silicon nitride and/or aluminum nitride, in the presence of a basic alkali metal compound and/or alkaline earth metal compound, with water at elevated temperature to give ammonia and alkali metal silicates and/or alkaline earth metal silicates.

Abstract: A solution is to be created, with a method and a device for generating hydrogen, in which silicon and/or an alloy that contains silicon is reacted in a reaction vessel (1), with an alkaline solution as a catalyst, so that the process, after starting, runs continuously and catalytically in the presence of silicon dioxide as a nucleating agent, without further addition of lye and without using higher pressures and temperatures (hydrothermal conditions). This is achieved in that the alkaline solution is used in a strongly sub-stoichiometric amount with reference to the entire reaction, whereby the silicon dioxide that is formed is precipitated onto crystallization nuclei.

Abstract: The present invention relates to a halogenated polysilane as a pure compound or mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in whose composition the atomic ratio substituent:silicon is greater than 1:1.

Abstract: A solution is to be created, with a method and a device for generating hydrogen, in which silicon and/or an alloy that contains silicon is reacted in a reaction vessel (1), with an alkaline solution as a catalyst, so that the process, after starting, runs continuously and catalytically in the presence of silicon dioxide as a nucleating agent, without further addition of lye and without using higher pressures and temperatures (hydrothermal conditions). This is achieved in that the alkaline solution is used in a strongly sub-stoichiometric amount with reference to the entire reaction, whereby the silicon dioxide that is formed is precipitated onto crystallization nuclei.