Abstract: The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.

Abstract: The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner.

Abstract: A method of producing urea includes reacting SiO2/Al2O3 or SiO2/Al2O3-containing material, with addition of a carbon source, with gaseous nitrogen at elevated temperature to produce silicon nitride (Si3N4)/aluminum nitride (AlN) or silicon nitride/aluminum nitride-containing material; reacting the silicon nitride/aluminum nitride or silicon nitride/aluminum nitride-containing material in the presence of a basic alkali metal compound and/or alkaline-earth metal compound, with water at elevated temperature, to produce ammonia and alkali metal silicates/aluminates and/or alkaline earth metal silicates/aluminates; and reacting the ammonia with carbon dioxide to produce the urea.

Abstract: A process for preparing hydrogenated polygermane as a pure compound or mixture of compounds, including hydrogenating halogenated polygermane.

Abstract: A method for producing oligosilanes by reacting halogenated oligosilanes with a metal hydride includes a reaction occurring in the presence of a catalyst and an alkali metal halide, the catalyst including a halide of a multivalent metal; and the reaction occurs in an ethereal solution.

Abstract: A chlorinated polysilane has the formula SiClx wherein x=0.01?0.8 and which can be produced by thermolysis of a chloropolysilane at a temperature below 600° C.

Abstract: A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane.

Abstract: A method and a device produce short-chain halogenated polysilanes and/or short-chain halogenated polysilanes and halide-containing silicon by thermolytic decomposition of long-chain halogenated polysilanes. The thermolytic decomposition of long-chain halogenated polysilanes diluted with low-molecular halosilanes is carried out under an atmosphere of halosilanes, thereby ensuring the production of such products at industrial scale in a simple and cost-effective manner.

Abstract: Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C-SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C-SiC and amorphous SiC or halogen-containing nanocrystalline 3C-SiC and amorphous carbon.

Abstract: The present invention relates to a method for the production of silicon from silyl halides. In a first step, the silyl halide is converted, with the generation of a plasma discharge, to a halogenated polysilane, which is subsequently decomposed to silicon, in a second step, with heating.

Abstract: A method for producing ammonia includes reacting SiO2 and/or Al2O3, or material containing SiO2 and/or Al2O3, with addition of a carbon source, with gaseous nitrogen at elevated temperature to give silicon nitride (Si3N4) and/or aluminum nitride (AlN), or material containing silicon nitride and/or aluminum nitride, and reacting resultant silicon nitride and/or aluminum nitride, or material containing silicon nitride and/or aluminum nitride, in the presence of a basic alkali metal compound and/or alkaline earth metal compound, with water at elevated temperature to give ammonia and alkali metal silicates and/or alkaline earth metal silicates.