Abstract: An RF power amplifier linearization architecture contains main and auxiliary path RF amplifiers. A distortion-inverting circuit extracts the distortion component from the output signal of the main amplifier and combines it with a delayed sample of the RF input signal to drive an auxiliary path RF amplifier, via a predistorter. An output quadrature hybrid combines the output of the main and auxiliary path amplifiers. The cascading of the distortion-inverting circuit with the predistorter compensates for the non-linear behavior of the auxiliary path RF power amplifier thereby producing a composite signal at the output quadrature hybrid, in which RF carrier components from each amplifier combine constructively while distortion components cancel.

Abstract: The envelope-dependency of the distortion-introducing behavior of an RF power amplifier is used to derive a predistortion signal, that is derived from a plurality of respectively different work function representative signals. Each work function signal, in turn, is based upon the envelope of the input signal to the RF power amplifier. Prior to being combined into a predistortion control signal, each work function signal is controllably weighted in accordance with an error measurement comparison of the amplifier input signal with the amplifier output signal. The error measurement function yields a measure of the error contained in the amplifier output signal, and drives a weight adjustment control mechanism, which controllably varies a set of weights for each of in-phase and quadrature components of the respectively different signal functions, in such a manner as to minimize the measured error.

Abstract: A digitally implemented, look-up table-based, predistortion and feed-forward correction signal processing mechanism compensates for distortion generated in the RF power amplifier. The input signal to the RF amplifier is stored for comparison with the measured the RF output. In each of predistortion and feed-forward signal processing paths, the magnitude of the complex waveform of the input signal is extracted to derive a read-out address to a dual-port RAM which stores weights to be multiplied by the input signal. In the predistortion signal processing path, the product is coupled to the RF power amplifier. In the feed-forward correction loop, the product is amplified by an auxiliary feed-forward RF amplifier and coupled into the amplified output signal path of the RF power amplifier.

Abstract: An RF power amplifier has an RF input port to which an RF input signal is coupled, an RF output port from which an amplified RF output signal is derived. An RF carrier cancellation combiner has a first input coupled to the RF input port and a second input coupled to the RF output port. The carrier cancellation combiner produces an RF error signal representative of RF distortion of a signal flow path through the RF amplifier between the RF input port and the RF output port. To reduce a residual carrier signal in the RF error signal, a wideband autocalibrating correlator correlates a reference signal, representative of the RF input signal, with the RF error signal, producing a control signal, which is coupled to a vector modulator to modify the signal flow path through the RF amplifier.

Abstract: Gate to drain capacitance in a lateral DMOS and vertical DMOS field effect transistor is minimized by providing a conductive shield plate under the gate and between the gate and the drain of the transistor. In operation, the shield plate is preferably connected to a DC voltage potential and coupled to AC ground for RF power applications. The shield plate is readily fabricated in a conventional polysilicon gate process by adding one additional polysilicon deposition (or other suitable material), one additional mask, and one additional etch step. The shield plate can include a raised portion which provides lateral capacitive isolation between the gate and the drain. Alternatively, a shield contact can be provided above the shield plate and between the gate and drain to provide lateral isolation.

Abstract: A linear MOSFET device includes a shield plate positioned between a drain and an overlying gate. A voltage bias is applied to the shield plate to maintain linear operation of the device for RF power amplification. An AC ground is preferably connected to the shield plate. The voltage bias can be varied for matching of parallel connected devices, for responding to peak input signals, and for temperature compensation.

Abstract: A digitally implemented, look-up table-based, predistortion and feed-forward correction signal processing mechanism compensates for distortion generated in the RF power amplifier. The input signal to the RF amplifier is stored for comparison with the measured the RF output. In each of predistortion and feed-forward signal processing paths, the magnitude of the complex waveform of the input signal is extracted to derive a read-out address to a dual-port RAM which stores weights to be multiplied by the input signal. In the predistortion signal processing path, the product is coupled to the RF power amplifier. In the feed-forward correction loop, the product is amplified by an auxiliary feed-forward RF amplifier and coupled into the amplified output signal path of the RF power amplifier.

Abstract: The envelope-dependency of the distortion-introducing behavior of an RF power amplifier is used to derive a predistortion signal, that is derived from a plurality of respectively different work function representative signals. Each work function signal, in turn, is based upon the envelope of the input signal to the RF power amplifier. Prior to being combined into a predistortion control signal, each work function signal is controllably weighted in accordance with an error measurement comparison of the amplifier input signal with the amplifier output signal. The error measurement function yields a measure of the error contained in the-amplifier output signal, and drives a weight adjustment control mechanism, which controllably varies a set of weights for each of in-phase and quadrature components of the respectively different signal functions, in such a manner as to minimize the measured error.

Abstract: A lateral diffused MOS transistor formed in a doped epitaxial semiconductor layer on a doped semiconductor substrate includes a source contact to the substrate which comprises a trench in the epitaxial layer filled with conductive material such as doped polysilicon, a refractory metal, or a refractory silicide. By providing a plug as part of the source contact, lateral diffusion of the source contact is reduced, thereby reducing overall pitch of the transistor cell. Further, source contact resistance is reduced by the presence of the conductive plug, and the reduced thermal budget requirements in forming the source contact reduces up diffusion from the doped substrate, thereby reducing parasitic capacitance.

Abstract: An RF power amplifier distortion measurement system measures amplitude and phase distortion of a microwave/RF power amplifier by phase quadrature down-conversion of each of an RF amplifier's input signal and amplified output signals to baseband in-phase (I) and quadrature (Q) components, and performing RF amplifier distortion measurements on these down-converted baseband I and Q signals. The derived error measurement signal is remodulated to RF by phase quadrature up-conversion circuitry to produce an up-converted RF signal that corresponds to the RF distortion component contained in the RF output signal produced by the RF power amplifier.

Abstract: A linearization scheme for an RF power amplifier combines an adaptive predistortion modulator with a feedforward error correction loop, which cancels noise imparted by predistortion modulation to the amplified signal, and minimizes distortion in the RF amplifier's output to a level that allows the use of a low cost auxiliary RF error amplifier in the feed-forward loop. The predistortion correction mechanism produces a predistortion signal based upon the input signal and is adaptively adjusted by an error signal extracted from the output of the a main RF power amplifier. The input signal is supplied to a work function generator unit and to a subtraction unit, which is also coupled to receive a fractional portion of the amplifier output signal and outputs the RF error component. The RF error component is coupled to a predistortion function generator, which is driven by the work function generator unit.

Abstract: Linearity of an RF/microwave power amplifier is enhanced by an amplitude and phase distortion correction mechanism based upon signal envelope feedback, that operates directly on the RF signal passing through the power amplifier. A phase-amplitude controller responds to changes in gain and phase through the RF/microwave power amplifier signal path caused by changes in RF input power, DC power supply voltages, time, temperature and other variables, and controls the operation of a gain and phase adjustment circuit, so as to maintain constant gain and transmission phase through the RF/microwave power amplifier.

Abstract: A circuit arrangement automatically sets quiescent collector current conditions for a class A/B RF power transistor, which is configured of a plurality of parallel-connected transistors formed in a common semiconductor die. The biasing circuit arrangement includes a temperature-sensing transistor having its collector-emitter current flow path coupled with a programmable constant current source. A differential amplifier circuit is coupled to the base and emitter electrodes of the temperature sensing transistor, and generates a bias voltage for biasing each of the transistors of the RF power device. This bias voltage is combined with a programmable D.C. offset voltage. The values of the constant current and D.C. offset voltage are programmed such that the average of the quiescent collector currents of the parallel-connected transistors of the RF power transistor corresponds to the quiescent collector current through the temperature-sensing transistor.