Abstract: An easily adjustable wafer retaining ring for both coarse and micro-adjustable engagement with a carrier head assembly of a chemical-mechanical polishing apparatus is disclosed. The carrier head supports the wafer on a wafer support surface during the polishing process. The wafer is held in place by a wafer retaining ring which has an inner and an outer set of threads around the inner and outer circumferences of the retaining ring. The carrier head has engagement means for engaging the retaining ring using the inner and outer threads of the retaining ring. The lower surface of the retaining ring has a groove, preferably, v-shaped which is in contact with the carrier head and parallel to the plane of rotational engagement of the retaining ring with the carrier head. A locking ring is receivably engageable with the groove of the retaining ring. A lock limits further vertical displacement of the retaining ring by bearing pressure down on the locking ring.

Abstract: A wafer mapping method and apparatus for automatically determining the location and orientation of workpieces within a workpiece processing tool. An illumination device is provided which directs light toward the edges of the workpieces and a vision system is utilized to receive and process the images obtained from the light which is reflected off the edges of the workpieces.

Abstract: An improvement to chemical-mechanical polishing. The improvement includes using a buffing pad having a geometrically optimized shape along with optimizing the buff head diameter, offset O and overlay L. In one embodiment, the buffing pad is smaller than the buff head and is mounted eccentrically. In another embodiment, the buffing pad has a generally square outer shape. In another embodiment, the buff pad is circular and is the same size as the circular buff head. In another embodiment, the buffing pad has at least three radially extending arms. The optimal configuration is determined iteratively for a selected process by changing the buffing pad shape, buff head diameter, the offset and the overlay. For example, increasing the offset generally tends to increase the removal rate toward the edge of the wafer. Increasing the overlap generally tends to increase the removal rate toward the center of the wafer.

Abstract: An integral machine for polishing, cleaning, rinsing and drying workpieces such as semiconductor wafers. A load/unload station has a plurality of platforms for receiving cassettes of wafers to be processed. A dry end-effector of a robot retrieves wafers from the cassettes and transfers them to an index table. A transfer apparatus having wafer carrier elements picks up wafers from the index table, moves the wafers to a polishing table for polishing, and returns the wafers to the index table for further processing. A flipper moves the polished wafers to a cleaning station. The cleaning station includes scrub stations, a rinsing station and a spin dryer station, and a connective system of water tracks. A wet end-effector of the robot transfers rinsed wafers to the spin dryer station. The dry end-effector of the robot moves dried wafers from the spin dryer station back to the cassette of origination.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: An apparatus and method are disclosed for a carrier that is able to create independently controllable pressure zones on the back surface of a wafer while the front surface of the wafer is being planarizing against an abrasive surface. The carrier has a central disk shaped recess surrounded by a plurality of concentric ring shaped recesses. The recesses are covered by a diaphragm thereby creating a central disk shaped plenum and a plurality of surrounding ring shaped plenums. A central disk shaped piston and a plurality of surrounding ring shaped pistons are suspended on the diaphragm so that a portion of each piston may move in and out of their corresponding plenum in the carrier. An independently controllable fluid communication path is placed in fluid communication with each plenum thereby allowing the pressure exerted on each piston to be independently controllable.

Abstract: Wafer polishing systems include a series of polish modules alongside a neighboring series of secondary modules. A conveyor travels along the series of polish modules and the series of secondary modules. When a polishing operation is completed, the wafers are transferred to a series of near-by storage modules. The polish modules include a pair of traveling wafer gantries, each of which delivers a wafer to a polishing surface, applying the necessary force to complete polishing of the wafer surface.

Abstract: A fluid metering apparatus includes a gas inlet, a first regulator in fluid communication with the gas inlet and configured to emit the gas at a first gas pressure, and a second regulator in fluid communication with the gas inlet and configured to emit the gas at a second gas pressure. A first valve is in fluid communication with the first regulator and a second valve is in fluid communication with the second regulator. A switch mechanism has two actuators which, when separately actuated, causes either the first valve to be open and the second valve to be closed or the first valve to be closed and the second valve to be open. The apparatus further includes a fluid pressure regulating device having a fluid inlet port which receives a fluid at a fluid inlet pressure, a gas inlet port and a fluid outlet port.

Abstract: A machine for polishing semiconductor wafers including a rotatable index table and a drive mechanism for the index table. The index table temporarily accommodates wafers between processing steps. The drive mechanism includes a continuously circulating grooved timing belt that engages gear teeth formed on an outside diameter portion of the index table to effect rotation of the index table. The index table includes a large diameter central opening for accommodating passage of other system components.

Abstract: A distributed control system for a semiconductor wafer processing machine includes a master control module and a plurality of application control modules. Each of the application control modules and the master control module are capable of autonomous, independent operation. The master control module regulates the operation of the application control modules, and the application control modules govern a number of sub-procedures carried out by the wafer processing machine. The sub-procedures may be governed by respective processing recipes that are downloaded from the master control module to the application control modules via a network link architecture.

Abstract: A method for planarizing the surface of a wafer against a polishing pad includes the steps of securing the wafer in a carrier, pressing the wafer against the polishing pad, rotating both the wafer and pad, and moving the wafer across the polishing pad to create one or more geometric patterns relative to the pad. Geometric patterns employed by the present method include a ‘figure eight’, an elliptical pattern, and a peanut-shaped pattern. In one embodiment of the invention, both a ‘figure eight’ pattern and an elliptical pattern are used during a single planarizing operation. Bezier splines (curves) are used to create geometric patterns employed by the planarizing process.

Abstract: An improved workpiece carrier assembly includes a workpiece retaining assembly having a plurality of distinct retaining elements rather than a one-piece retaining ring. In accordance with one embodiment, a plurality of retaining segments reside within a like plurality of channels. The retaining segments may be individually or collectively controlled by a pressurized fluid system. In accordance with an alternate embodiment, a plurality of retaining pins reside within a like plurality of guide sleeves. The retaining pins may be individually or collectively controlled by a pressurized fluid system.

Abstract: A method and apparatus is presented for planarizing or polishing workpiece surfaces using an ion beam in the presence of a radio frequency generated plasma. A workpiece is placed in a holder within a vacuum chamber equipped with a radio frequency inductive plasma generator. The workpiece surface is exposed to a source of energetic ions, the chamber is filled with gas, and the gas is ionized with radio frequency energy to form inductive plasma that surrounds the workpiece. An ion beam mounted above the workpiece scans the workpiece surface with sufficient energy to remove micro irregularities from the workpiece surface.

Abstract: A system and method for detecting process endpoint in CMP is presented which monitors the progression of chemical activities that take place from the chemical reaction that occurs at the wafer surface during polishing. In order to monitor the progression of chemical activities taking place from the chemical reaction, a surface plasmon resonance sensor acts as a conducting surface which supports surface plasmon resonance.

Abstract: A method and apparatus for resurfacing a polishing pad using non-abrasive techniques. These techniques include shaving, milling, or planing the upper working surface of the polishing pad using an edged cutting tool to alter the microtexture and micro-topology of the surface to produce a desired surface contour or planarity. This precise conditioning of the microscopic features of the polishing pad surface controls dishing in workpieces during polishing.

Abstract: A wafer sensor includes a wafer holder, a liquid distribution system, and a pressure sensor. The wafer holder has a hole and is configured so that a wafer being held by the wafer holder restricts the flow of liquid from the liquid distribution system through the hole. The pressure sensor has a predetermined threshold and is configured to sense the pressure of the fluid at the hole. When no wafer is present in the wafer holder, the fluid flows essentially unrestricted through the hole in the wafer holder, resulting in a relatively low pressure of the liquid in the hole. When the wafer holder holds a wafer, the restricted flow through the hole causes an increase in pressure of the liquid in the hole. This increased pressure triggers the pressure sensor, thereby indicating the presence of the wafer in the wafer holder.

Abstract: Method and apparatus for in-situ measurement of workpiece displacement during chemical mechanical polishing are disclosed. The chemical mechanical polishing apparatus includes a platen having a polishing material attached thereto and a distance measurement device attached to the platen. The distance measurement device includes a light source and a light sensor. Distance between the device and the workpiece is measured by transmitting light through apertures formed within the platen and the polishing material toward the workpiece and focusing the light reflected from the workpiece on an element within the sensor.

Abstract: An apparatus for use with a chemical mechanical planarization (CMP) system includes an ultrasonic source that is disposed proximate a workpiece carrier. The ultrasonic source generates an ultrasonic signal toward an area of a polishing pad or a workpiece during the polishing of the workpiece held by the carrier. An ultrasonic detector is configured to receive a reflected ultrasonic signal for processing in order to determine the presence of extraneous material at the area of the polishing pad.