Abstract: A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be include a layer of CoFeB ferromagnetic material.

Abstract: A method for manufacturing a magnetic random access memory chip having magnetic memory elements with different performance characteristics formed on the same chip. The magnetic memory elements can be magnetic random access memory elements. The memory chip can have a first set of magnetic random access chips having a first set of physical and performance characteristics formed in a first area of the sensor and a second set of magnetic random access chips having a second set of performance characteristics formed in a second area of the chip. For example, the first set of magnetic random access memory elements can have performance characteristics that match or exceed those of a non-volatile memory, whereas the second set of magnetic random access memory elements can have performance characteristic that match or exceed those of a static random access memory element.

Abstract: Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes a three-terminal structure, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.

Abstract: A Magnetic Random Access Memory (MRAM) structure having a thermally conductive, dielectric cladding material that contacts an outer side of a magnetic memory element. The magnetic memory element can be a magnetic tunnel junction element formed as a cylindrical pillar that extends between first and second electrically conductive lead layers. The cylinder of the magnetic memory element can have an outer periphery, and the cladding material can be formed to contact the entire periphery. In addition, a heat sink structure formed of a dielectric material having a high specific heat capacity can be formed to contact an outer periphery of the cladding material. The cladding material and heat sink structure efficiently conduct heat away from the sides of the memory element to prevent the temperature of the memory element to rise to unsafe levels. This advantageously assists in maintaining a high reliability and long life of the MRAM system.

Abstract: In one embodiment, an apparatus includes lower electrodes positioned below a surface of a substrate, the substrate including crystalline Si, a plurality of strap regions positioned above the lower electrodes and below sets of pillars of Si, the pillars rising above the substrate, the sets of pillars being aligned in a first direction along a plane perpendicular to a film thickness direction, and the strap regions extending above a surface of the substrate, silicide junctions positioned between each of the strap regions and a corresponding lower electrode positioned therebelow, upper electrodes positioned above each of the pillars, gate dielectric layers positioned on sides of the pillars to a height greater than a lower edge of the upper electrodes, and gate layers positioned on sides of the gate dielectric layers in a second direction along the plane and perpendicular to the first direction that transverse a plurality of sets of pillars.

Abstract: A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be comprised of a layer of CoFeB ferromagnetic material.

Abstract: A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a spin current injection capping layer between the free layer of a magnetic tunnel junction and the orthogonal polarizer layer. The spin current injection capping layer maximizes the spin torque through very efficient spin current injection from the polarizer. The spin current injection capping layer can be comprised of a layer of MgO and a layer of a ferromagnetic material.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. The precessional spin current magnetic layer has a central axis that is offset from a central axis of the free layer. The device is designed to provide control over the injection of stray fields and the electronic coupling between the precessional spin current magnetic layer and the free layer. Switching speed, switching current, and thermal barrier height for the device can be adjusted. The off-center design may be used to adjust the location of the stray-field injection in the free layer.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate.

Abstract: A magnetoresistive random-access memory device with a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The memory device includes an antiferromagnetic structure and a magnetic tunnel junction structure disposed on the antiferromagnetic structure. The magnetic tunnel junction structure includes a reference layer and a free layer with a barrier layer sandwiched therebetween. Furthermore, a capping layer including a tantalum nitride film is disposed on the free layer of the magnetic tunnel junction structure.