Abstract: The invention relates to a floating state detection circuit of a node, comprising a first conductivity type MOS transistor (M1) connected between the node (N) and a first power supply line (Vss); and a second MOS transistor (M2) of conductivity type complementary to the first conductivity type, controlled by the node (N) and connected between the gate of the first transistor (M1) and a second supply line (Vdd). In addition, a third MOS transistor (M3) of the first conductivity type connected between the gate of the first transistor (M1) and the first supply line (Vss) may be controlled by the node (N).
Type:
Grant
Filed:
January 11, 2018
Date of Patent:
February 23, 2021
Assignee:
SPRYNGS
Inventors:
Nicolas Pierre Delorme, Christophe Le Blanc, Daniel Saias