Abstract: A silver or silver alloy thin layer on a substrate is etched by an etching liquid uniformly without producing an etching residue while avoiding side etching due to over etching. The etching liquid contains silver ions in a range from 0.005 to 1 weight %. The etching liquid is fed to a tank or an etching liquid feeding apparatus, and then brought into contact with the silver or silver alloy thin layer on the substrate.
Type:
Grant
Filed:
July 18, 2002
Date of Patent:
October 19, 2004
Assignees:
Sony Corporation, St Liquid Crystal Display Corporation, Mitsubishi Chemical Corporation
Abstract: A silver or silver alloy thin layer on a substrate is etched by an etching liquid uniformly without producing an etching residue while avoiding side etching due to over etching. The etching liquid contains silver ions in a range from 0.005 to 1 weight %. The etching liquid is fed to a tank or an etching liquid feeding apparatus, and then brought into contact with the silver or silver alloy thin layer on the substrate.
Type:
Application
Filed:
July 18, 2002
Publication date:
January 30, 2003
Applicant:
SONY CORPORATION; ST LIQUID CRYSTAL DISPLAY CORPORATION; and MITSUBISHI CHEMICAL CORPORATION